Modulation of the operational characteristics of amorphous InGaZnO thin-film transistors by In 2O 3 nanoparticles

Min Jung Lee, Tae Il Lee, Jee Ho Park, Jung Han Kim, Gee Sung Chae, Myung Chul Jun, Yong Kee Hwang, Hong Koo Baik, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The structure of thin-film transistors (TFTs) based on amorphous InGaZnO (a-IGZO) was modified by spin coating a suspension of In 2O 3 nanoparticles on a SiO 2/p ++ Si layered wafer surface prior to the deposition of IGZO layer by room-temperature sputtering. The number of particles per unit area (surface density) of the In 2O 3 nanoparticles could be controlled by applying multiple spin coatings of the nanoparticle suspension. During the deposition of IGZO, the In 2O 3 nanoparticles initially located on the substrate surface migrated to the top of the IGZO layer indicating that they were not embedded within the IGZO layer, but they supplied In to the IGZO layer to increase the In concentration in the channel layer. As a result, the channel characteristics of the a-IGZO TFT were modulated so that the device showed an enhanced performance as compared with the reference device prepared without the nanoparticle treatment. Such an improved device performance is attributed to the nano-scale changes in the structure of (InO) n ordering assisted by increased In concentration in the amorphous channel layer.

Original languageEnglish
Article number205303
JournalJournal of Physics D: Applied Physics
Volume45
Issue number20
DOIs
Publication statusPublished - 2012 May 23

Fingerprint

Amorphous films
Thin film transistors
transistors
Modulation
Nanoparticles
modulation
nanoparticles
thin films
Spin coating
Suspensions
Sputtering
coating
sputtering
wafers
coatings
Substrates
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Lee, Min Jung ; Lee, Tae Il ; Park, Jee Ho ; Kim, Jung Han ; Chae, Gee Sung ; Jun, Myung Chul ; Hwang, Yong Kee ; Baik, Hong Koo ; Lee, Woong ; Myoung, Jae Min. / Modulation of the operational characteristics of amorphous InGaZnO thin-film transistors by In 2O 3 nanoparticles. In: Journal of Physics D: Applied Physics. 2012 ; Vol. 45, No. 20.
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Modulation of the operational characteristics of amorphous InGaZnO thin-film transistors by In 2O 3 nanoparticles. / Lee, Min Jung; Lee, Tae Il; Park, Jee Ho; Kim, Jung Han; Chae, Gee Sung; Jun, Myung Chul; Hwang, Yong Kee; Baik, Hong Koo; Lee, Woong; Myoung, Jae Min.

In: Journal of Physics D: Applied Physics, Vol. 45, No. 20, 205303, 23.05.2012.

Research output: Contribution to journalArticle

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AU - Lee, Min Jung

AU - Lee, Tae Il

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AU - Kim, Jung Han

AU - Chae, Gee Sung

AU - Jun, Myung Chul

AU - Hwang, Yong Kee

AU - Baik, Hong Koo

AU - Lee, Woong

AU - Myoung, Jae Min

PY - 2012/5/23

Y1 - 2012/5/23

N2 - The structure of thin-film transistors (TFTs) based on amorphous InGaZnO (a-IGZO) was modified by spin coating a suspension of In 2O 3 nanoparticles on a SiO 2/p ++ Si layered wafer surface prior to the deposition of IGZO layer by room-temperature sputtering. The number of particles per unit area (surface density) of the In 2O 3 nanoparticles could be controlled by applying multiple spin coatings of the nanoparticle suspension. During the deposition of IGZO, the In 2O 3 nanoparticles initially located on the substrate surface migrated to the top of the IGZO layer indicating that they were not embedded within the IGZO layer, but they supplied In to the IGZO layer to increase the In concentration in the channel layer. As a result, the channel characteristics of the a-IGZO TFT were modulated so that the device showed an enhanced performance as compared with the reference device prepared without the nanoparticle treatment. Such an improved device performance is attributed to the nano-scale changes in the structure of (InO) n ordering assisted by increased In concentration in the amorphous channel layer.

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