Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation

Young Woon Park, Sahng Kyoon Jerng, Jae Ho Jeon, Sanjib Baran Roy, Kamran Akbar, Jeong Kim, Yumin Sim, Maeng Je Seong, Jung Hwa Kim, Zonghoon Lee, Minju Kim, Yeonjin Yi, Jinwoo Kim, Do Young Noh, Seung Hyun Chun

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210°C-370°C. The surface consists of a mixture of N and (N ± 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (±0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of ∼100 nm and clear Moiré patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm2 V-1 s-1 and 6.7 cm2 V-1 s-1 for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials.

Original languageEnglish
Article number014006
Journal2D Materials
Volume4
Issue number1
DOIs
Publication statusPublished - 2017 Mar 1

Fingerprint

Molecular beam epitaxy
Monolayers
molecular beam epitaxy
Energy harvesting
Mica
Substrates
High resolution transmission electron microscopy
Epitaxial growth
mica
epitaxy
platforms
grain size
industries
transmission electron microscopy
high resolution
Industry
electronics
Temperature
temperature
energy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, Y. W., Jerng, S. K., Jeon, J. H., Roy, S. B., Akbar, K., Kim, J., ... Chun, S. H. (2017). Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation. 2D Materials, 4(1), [014006]. https://doi.org/10.1088/2053-1583/aa51a2
Park, Young Woon ; Jerng, Sahng Kyoon ; Jeon, Jae Ho ; Roy, Sanjib Baran ; Akbar, Kamran ; Kim, Jeong ; Sim, Yumin ; Seong, Maeng Je ; Kim, Jung Hwa ; Lee, Zonghoon ; Kim, Minju ; Yi, Yeonjin ; Kim, Jinwoo ; Noh, Do Young ; Chun, Seung Hyun. / Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation. In: 2D Materials. 2017 ; Vol. 4, No. 1.
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Park, YW, Jerng, SK, Jeon, JH, Roy, SB, Akbar, K, Kim, J, Sim, Y, Seong, MJ, Kim, JH, Lee, Z, Kim, M, Yi, Y, Kim, J, Noh, DY & Chun, SH 2017, 'Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation', 2D Materials, vol. 4, no. 1, 014006. https://doi.org/10.1088/2053-1583/aa51a2

Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation. / Park, Young Woon; Jerng, Sahng Kyoon; Jeon, Jae Ho; Roy, Sanjib Baran; Akbar, Kamran; Kim, Jeong; Sim, Yumin; Seong, Maeng Je; Kim, Jung Hwa; Lee, Zonghoon; Kim, Minju; Yi, Yeonjin; Kim, Jinwoo; Noh, Do Young; Chun, Seung Hyun.

In: 2D Materials, Vol. 4, No. 1, 014006, 01.03.2017.

Research output: Contribution to journalArticle

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T1 - Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation

AU - Park, Young Woon

AU - Jerng, Sahng Kyoon

AU - Jeon, Jae Ho

AU - Roy, Sanjib Baran

AU - Akbar, Kamran

AU - Kim, Jeong

AU - Sim, Yumin

AU - Seong, Maeng Je

AU - Kim, Jung Hwa

AU - Lee, Zonghoon

AU - Kim, Minju

AU - Yi, Yeonjin

AU - Kim, Jinwoo

AU - Noh, Do Young

AU - Chun, Seung Hyun

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210°C-370°C. The surface consists of a mixture of N and (N ± 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (±0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of ∼100 nm and clear Moiré patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm2 V-1 s-1 and 6.7 cm2 V-1 s-1 for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials.

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