Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors

Byoung H. Lee, Kyo K. Im, Kwang H. Lee, Seongil Im, Myung M. Sung

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 °C using MLD with repeated sequential adsorptions of C{double bond, long}C terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO2 inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH3)3)4 and H2O. The prepared SAOL-ZrO2 organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (~ 16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm2/V s, operating at - 1 V with an on/off current ratio of ~ 103.

Original languageEnglish
Pages (from-to)4056-4060
Number of pages5
JournalThin Solid Films
Volume517
Issue number14
DOIs
Publication statusPublished - 2009 May 29

Fingerprint

Thin film transistors
Atomic layer deposition
transistors
Thin films
thin films
atomic layer epitaxy
Mechanical stability
Ozone
Superlattices
Surface reactions
Zirconium
Hydroxyl Radical
Permittivity
Gases
Chemical activation
Vacuum
Adsorption
Electric potential
low voltage
surface reactions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, Byoung H. ; Im, Kyo K. ; Lee, Kwang H. ; Im, Seongil ; Sung, Myung M. / Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors. In: Thin Solid Films. 2009 ; Vol. 517, No. 14. pp. 4056-4060.
@article{97a919dff2394fdca83f50b4a434808a,
title = "Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors",
abstract = "Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 °C using MLD with repeated sequential adsorptions of C{double bond, long}C terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO2 inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH3)3)4 and H2O. The prepared SAOL-ZrO2 organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (~ 16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm2/V s, operating at - 1 V with an on/off current ratio of ~ 103.",
author = "Lee, {Byoung H.} and Im, {Kyo K.} and Lee, {Kwang H.} and Seongil Im and Sung, {Myung M.}",
year = "2009",
month = "5",
day = "29",
doi = "10.1016/j.tsf.2009.01.173",
language = "English",
volume = "517",
pages = "4056--4060",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "14",

}

Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors. / Lee, Byoung H.; Im, Kyo K.; Lee, Kwang H.; Im, Seongil; Sung, Myung M.

In: Thin Solid Films, Vol. 517, No. 14, 29.05.2009, p. 4056-4060.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors

AU - Lee, Byoung H.

AU - Im, Kyo K.

AU - Lee, Kwang H.

AU - Im, Seongil

AU - Sung, Myung M.

PY - 2009/5/29

Y1 - 2009/5/29

N2 - Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 °C using MLD with repeated sequential adsorptions of C{double bond, long}C terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO2 inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH3)3)4 and H2O. The prepared SAOL-ZrO2 organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (~ 16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm2/V s, operating at - 1 V with an on/off current ratio of ~ 103.

AB - Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 °C using MLD with repeated sequential adsorptions of C{double bond, long}C terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO2 inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH3)3)4 and H2O. The prepared SAOL-ZrO2 organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (~ 16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm2/V s, operating at - 1 V with an on/off current ratio of ~ 103.

UR - http://www.scopus.com/inward/record.url?scp=65449160456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65449160456&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.01.173

DO - 10.1016/j.tsf.2009.01.173

M3 - Article

VL - 517

SP - 4056

EP - 4060

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 14

ER -