Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes

Hyeokjae Kwon, Sourav Garg, Ji Hoon Park, Yeonsu Jeong, Sanghyuck Yu, Seongsin M. Kim, Patrick Kung, Seongil Im

Research output: Contribution to journalArticle

Abstract

Two-dimensional molybdenum disulfide (MoS2) has substantial potential as a semiconducting material for devices. However, it is commonly prepared by mechanical exfoliation, which limits flake size to only a few micrometers, which is not sufficient for processes such as photolithography and circuit patterning. Chemical vapor deposition (CVD) has thus become a mainstream fabrication technique to achieve large-area MoS2. However, reports of conventional photolithographic patterning of large-area 2D MoS2-based devices with high mobilities and low switching voltages are rare. Here we fabricate CVD-grown large-area MoS2 field-effect transistors (FETs) by photolithography and demonstrate their potential as switching and driving FETs for pixels in analog organic light-emitting diode (OLED) displays. We spin-coat an ultrathin hydrophobic polystyrene layer on an Al2O3 dielectric, so that the uniformity of threshold voltage (Vth) of the FETs might be improved. Our MoS2 FETs show a high linear mobility of approximately 10 cm2 V−1 s−1, due to a large grain size around 60 μm, and a high ON/OFF current ratio of 108. Dynamic switching of blue and green OLED pixels is shown at ~5 V, demonstrating their application potential.

Original languageEnglish
Article number9
Journalnpj 2D Materials and Applications
Volume3
Issue number1
DOIs
Publication statusPublished - 2019 Dec 1

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Organic light emitting diodes (OLED)
Photolithography
photolithography
Field effect transistors
Monolayers
light emitting diodes
field effect transistors
Pixels
pixels
matrices
Chemical vapor deposition
vapor deposition
molybdenum disulfides
flakes
Polystyrenes
Threshold voltage
threshold voltage
Molybdenum
micrometers
polystyrene

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics
  • Chemistry(all)

Cite this

Kwon, Hyeokjae ; Garg, Sourav ; Park, Ji Hoon ; Jeong, Yeonsu ; Yu, Sanghyuck ; Kim, Seongsin M. ; Kung, Patrick ; Im, Seongil. / Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes. In: npj 2D Materials and Applications. 2019 ; Vol. 3, No. 1.
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Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes. / Kwon, Hyeokjae; Garg, Sourav; Park, Ji Hoon; Jeong, Yeonsu; Yu, Sanghyuck; Kim, Seongsin M.; Kung, Patrick; Im, Seongil.

In: npj 2D Materials and Applications, Vol. 3, No. 1, 9, 01.12.2019.

Research output: Contribution to journalArticle

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