Monolithic high-Q overhang inductors fabricated on silicon and glass substrates

Jun Bo Yoon, Chul Hi Han, Euisik Yoon, Choong Ki Kim

Research output: Contribution to journalConference article

59 Citations (Scopus)

Abstract

We have investigated the RF performance of the micromachined integrated spiral inductors overhanging several tens of microns from the substrate, having at least 10μm in copper thickness. From the experiments, it can be speculated that once the inductor is overhung by at least 30μm, the substrate coupling can be eliminated almost completely even in the standard silicon substrate, as long as there is no additional support. The inductor overhanging 30μm from the standard silicon substrate has shown an inductance of 1.8nH with the unprecedented peak Q-factor of 50 at 7GHz.

Original languageEnglish
Pages (from-to)753-756
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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