Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency

Jae Cheol Shin, Kyou Hyun Kim, Hefei Hu, Ki Jun Yu, John A. Rogers, Jian Min Zuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa 1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.

Original languageEnglish
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages101-102
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: 2011 Jun 202011 Jun 22

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period11/6/2011/6/22

Fingerprint

Nanowires
Solar cells
Silicon
Lattice mismatch
Substrates
Dislocations (crystals)
Epitaxial growth
Energy gap
Infrared radiation
Catalysts
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Shin, J. C., Kim, K. H., Hu, H., Yu, K. J., Rogers, J. A., Zuo, J. M., & Li, X. (2011). Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 101-102). [5994434] https://doi.org/10.1109/DRC.2011.5994434
Shin, Jae Cheol ; Kim, Kyou Hyun ; Hu, Hefei ; Yu, Ki Jun ; Rogers, John A. ; Zuo, Jian Min ; Li, Xiuling. / Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency. 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. pp. 101-102
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Shin, JC, Kim, KH, Hu, H, Yu, KJ, Rogers, JA, Zuo, JM & Li, X 2011, Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994434, pp. 101-102, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 11/6/20. https://doi.org/10.1109/DRC.2011.5994434

Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency. / Shin, Jae Cheol; Kim, Kyou Hyun; Hu, Hefei; Yu, Ki Jun; Rogers, John A.; Zuo, Jian Min; Li, Xiuling.

69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 101-102 5994434.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Shin JC, Kim KH, Hu H, Yu KJ, Rogers JA, Zuo JM et al. Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency. In 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 101-102. 5994434 https://doi.org/10.1109/DRC.2011.5994434