Morphological and photoluminescence analysis of zinc oxide thin films deposited by RF sputtering at different substrate temperatures

S. P. Ghosh, K. C. Das, N. Tripathy, G. Bose, T. Lee, J. M. Myoung, J. P. Kar

Research output: Contribution to journalConference article

Abstract

Zinc oxide (ZnO) thin films were prepared using reactive RF magnetron sputtering of a pure metallic zinc target onto n-type (100) silicon substrates. The evolution of the surface morphology and the optical properties of the films were studied as a function of the substrate temperature, which was varied from ambient to 300°C. X-ray diffraction pattern of ZnO thin film shows the appearance of c-axis oriented (002) peak for all samples shows varying degrees of crystallinity of films. Photoluminescence studies were also carried out (350-700 nm) to study the crystallinity and optically active defects in the films. PL spectra of the film shows UV emission peak depicts good crystallinity of ZnO film where as the intensity of deep level emission band decreases with increase in substrate temperature due to the formation of stoichiometric ZnO film which causes decrease in defect.

Original languageEnglish
Article number012023
JournalIOP Conference Series: Materials Science and Engineering
Volume75
Issue number1
DOIs
Publication statusPublished - 2015 Jan 1
Event4th National Conference on Processing and Characterization of Materials, NCPCM 2014 - Rourkela, Odisha, India
Duration: 2014 Dec 52014 Dec 6

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Zinc Oxide
Zinc oxide
Oxide films
Sputtering
Photoluminescence
Thin films
Substrates
Temperature
Defects
Silicon
Magnetron sputtering
Diffraction patterns
Surface morphology
Zinc
Optical properties
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

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title = "Morphological and photoluminescence analysis of zinc oxide thin films deposited by RF sputtering at different substrate temperatures",
abstract = "Zinc oxide (ZnO) thin films were prepared using reactive RF magnetron sputtering of a pure metallic zinc target onto n-type (100) silicon substrates. The evolution of the surface morphology and the optical properties of the films were studied as a function of the substrate temperature, which was varied from ambient to 300°C. X-ray diffraction pattern of ZnO thin film shows the appearance of c-axis oriented (002) peak for all samples shows varying degrees of crystallinity of films. Photoluminescence studies were also carried out (350-700 nm) to study the crystallinity and optically active defects in the films. PL spectra of the film shows UV emission peak depicts good crystallinity of ZnO film where as the intensity of deep level emission band decreases with increase in substrate temperature due to the formation of stoichiometric ZnO film which causes decrease in defect.",
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Morphological and photoluminescence analysis of zinc oxide thin films deposited by RF sputtering at different substrate temperatures. / Ghosh, S. P.; Das, K. C.; Tripathy, N.; Bose, G.; Lee, T.; Myoung, J. M.; Kar, J. P.

In: IOP Conference Series: Materials Science and Engineering, Vol. 75, No. 1, 012023, 01.01.2015.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Morphological and photoluminescence analysis of zinc oxide thin films deposited by RF sputtering at different substrate temperatures

AU - Ghosh, S. P.

AU - Das, K. C.

AU - Tripathy, N.

AU - Bose, G.

AU - Lee, T.

AU - Myoung, J. M.

AU - Kar, J. P.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Zinc oxide (ZnO) thin films were prepared using reactive RF magnetron sputtering of a pure metallic zinc target onto n-type (100) silicon substrates. The evolution of the surface morphology and the optical properties of the films were studied as a function of the substrate temperature, which was varied from ambient to 300°C. X-ray diffraction pattern of ZnO thin film shows the appearance of c-axis oriented (002) peak for all samples shows varying degrees of crystallinity of films. Photoluminescence studies were also carried out (350-700 nm) to study the crystallinity and optically active defects in the films. PL spectra of the film shows UV emission peak depicts good crystallinity of ZnO film where as the intensity of deep level emission band decreases with increase in substrate temperature due to the formation of stoichiometric ZnO film which causes decrease in defect.

AB - Zinc oxide (ZnO) thin films were prepared using reactive RF magnetron sputtering of a pure metallic zinc target onto n-type (100) silicon substrates. The evolution of the surface morphology and the optical properties of the films were studied as a function of the substrate temperature, which was varied from ambient to 300°C. X-ray diffraction pattern of ZnO thin film shows the appearance of c-axis oriented (002) peak for all samples shows varying degrees of crystallinity of films. Photoluminescence studies were also carried out (350-700 nm) to study the crystallinity and optically active defects in the films. PL spectra of the film shows UV emission peak depicts good crystallinity of ZnO film where as the intensity of deep level emission band decreases with increase in substrate temperature due to the formation of stoichiometric ZnO film which causes decrease in defect.

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