In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the <111> direction was extremely suppressed, their lateral growth was enhanced when the diethyl-tellurium (DETe) flow rate was increased as they grew. Moreover, the sidewall planes evolved from ((Formula presented.)) (90° against the (111) plane) to a reverse-tapered morphology, which had a 62° slope against the InP (111)B plane, when the Te flow rate and growth time were increased. This indicates that the surfactant effect of adsorbed Te atoms on InAs changes the relative growth rate between (111) and ((Formula presented.)) due to the increase in surface free energy in the growth plane.
|Publication status||Published - 2022 Dec|
Bibliographical noteFunding Information:
This research was supported by the National Research Foundation of Korea (NRF) Ministry of Science and ICT under grant No. NRF-2017M3A7B4049518 and grant No. NRF-2022M3I8A1085446.
© 2022 by the authors.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Condensed Matter Physics
- Inorganic Chemistry