MoS 2 -InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

Jaehyun Yang, Hyena Kwak, Youngbin Lee, Yu Seon Kang, Mann-Ho Cho, Jeong Ho Cho, Yong Hoon Kim, Seong Jun Jeong, Seongjun Park, Hoo Jeong Lee, Hyoungsub Kim

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS 2 , with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS 2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS 2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS 2 film with a small band gap prepared through a large-area synthetic route. The MoS 2 -IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

Original languageEnglish
Pages (from-to)8576-8582
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number13
DOIs
Publication statusPublished - 2016 Apr 20

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Phototransistors
Zinc Oxide
Gallium
Indium
Zinc oxide
Heterojunctions
Energy gap
Carrier mobility
Molybdenum
Oxide films
Transistors
Wavelength
Electrons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Yang, Jaehyun ; Kwak, Hyena ; Lee, Youngbin ; Kang, Yu Seon ; Cho, Mann-Ho ; Cho, Jeong Ho ; Kim, Yong Hoon ; Jeong, Seong Jun ; Park, Seongjun ; Lee, Hoo Jeong ; Kim, Hyoungsub. / MoS 2 -InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 13. pp. 8576-8582.
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abstract = "We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS 2 , with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS 2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS 2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS 2 film with a small band gap prepared through a large-area synthetic route. The MoS 2 -IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.",
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Yang, J, Kwak, H, Lee, Y, Kang, YS, Cho, M-H, Cho, JH, Kim, YH, Jeong, SJ, Park, S, Lee, HJ & Kim, H 2016, ' MoS 2 -InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity ', ACS Applied Materials and Interfaces, vol. 8, no. 13, pp. 8576-8582. https://doi.org/10.1021/acsami.5b11709

MoS 2 -InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity . / Yang, Jaehyun; Kwak, Hyena; Lee, Youngbin; Kang, Yu Seon; Cho, Mann-Ho; Cho, Jeong Ho; Kim, Yong Hoon; Jeong, Seong Jun; Park, Seongjun; Lee, Hoo Jeong; Kim, Hyoungsub.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 13, 20.04.2016, p. 8576-8582.

Research output: Contribution to journalArticle

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AU - Yang, Jaehyun

AU - Kwak, Hyena

AU - Lee, Youngbin

AU - Kang, Yu Seon

AU - Cho, Mann-Ho

AU - Cho, Jeong Ho

AU - Kim, Yong Hoon

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AU - Park, Seongjun

AU - Lee, Hoo Jeong

AU - Kim, Hyoungsub

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N2 - We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS 2 , with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS 2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS 2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS 2 film with a small band gap prepared through a large-area synthetic route. The MoS 2 -IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

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