MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

Jaehyun Yang, Hyena Kwak, Youngbin Lee, Yu Seon Kang, Mann Ho Cho, Jeong Ho Cho, Yong Hoon Kim, Seong Jun Jeong, Seongjun Park, Hoo Jeong Lee, Hyoungsub Kim

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

Original languageEnglish
Pages (from-to)8576-8582
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number13
DOIs
Publication statusPublished - 2016 Apr 20

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Phototransistors
Zinc Oxide
Gallium
Indium
Zinc oxide
Heterojunctions
Energy gap
Carrier mobility
Molybdenum
Oxide films
Transistors
Wavelength
Electrons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Yang, Jaehyun ; Kwak, Hyena ; Lee, Youngbin ; Kang, Yu Seon ; Cho, Mann Ho ; Cho, Jeong Ho ; Kim, Yong Hoon ; Jeong, Seong Jun ; Park, Seongjun ; Lee, Hoo Jeong ; Kim, Hyoungsub. / MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity. In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 13. pp. 8576-8582.
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author = "Jaehyun Yang and Hyena Kwak and Youngbin Lee and Kang, {Yu Seon} and Cho, {Mann Ho} and Cho, {Jeong Ho} and Kim, {Yong Hoon} and Jeong, {Seong Jun} and Seongjun Park and Lee, {Hoo Jeong} and Hyoungsub Kim",
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Yang, J, Kwak, H, Lee, Y, Kang, YS, Cho, MH, Cho, JH, Kim, YH, Jeong, SJ, Park, S, Lee, HJ & Kim, H 2016, 'MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity', ACS Applied Materials and Interfaces, vol. 8, no. 13, pp. 8576-8582. https://doi.org/10.1021/acsami.5b11709

MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity. / Yang, Jaehyun; Kwak, Hyena; Lee, Youngbin; Kang, Yu Seon; Cho, Mann Ho; Cho, Jeong Ho; Kim, Yong Hoon; Jeong, Seong Jun; Park, Seongjun; Lee, Hoo Jeong; Kim, Hyoungsub.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 13, 20.04.2016, p. 8576-8582.

Research output: Contribution to journalArticle

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T1 - MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

AU - Yang, Jaehyun

AU - Kwak, Hyena

AU - Lee, Youngbin

AU - Kang, Yu Seon

AU - Cho, Mann Ho

AU - Cho, Jeong Ho

AU - Kim, Yong Hoon

AU - Jeong, Seong Jun

AU - Park, Seongjun

AU - Lee, Hoo Jeong

AU - Kim, Hyoungsub

PY - 2016/4/20

Y1 - 2016/4/20

N2 - We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

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