MoS 2 nanosheet phototransistors with thickness-modulated optical energy gap

Hee Sung Lee, Sung Wook Min, Youn Gyung Chang, Min Kyu Park, Taewook Nam, Hyungjun Kim, Jae Hoon Kim, Sunmin Ryu, Seongil Im

Research output: Contribution to journalArticle

924 Citations (Scopus)

Abstract

We report on the fabrication of top-gate phototransistors based on a few-layered MoS 2 nanosheet with a transparent gate electrode. Our devices with triple MoS 2 layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS 2 layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS 2 has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS 2 reduce to 1.65 and 1.35 eV, respectively.

Original languageEnglish
Pages (from-to)3695-3700
Number of pages6
JournalNano letters
Volume12
Issue number7
DOIs
Publication statusPublished - 2012 Jul 11

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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