Mosaic structure of various oriented grains in CoSi2/Si(001)

Tae Soo Kang, Jung Ho Je, Gi Bum Kim, Hong Koo Baik, Sung Man Lee

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Abstract

We investigated the mosaic structure of CoSi2/Si(001) film in a synchrotron x-ray scattering experiment. The CoSi2 film, formed by thermal reaction of a 120 Å Co film on Si(001), was composed largely of epitaxial grains of various orientations. In particular, the twin oriented (B-type) CoSi2(111) grains were grown epitaxially on the Si{111} facets that were generated during annealing. Two distinct mosaic structures were observed in the CoSi2 grains; the epitaxial grains of the same orientation with the Si substrate, such as the CoSi2(001) [the CoSi2(111)] grains lying on the Si(001) [the Si{111} facets], showed a small mosaicity of ∼0.5° full width at half maximum (FWHM), while those of different orientations demonstrated a rather broad mosaicity of ∼2.5° FWHM. We attributed the smaller mosaicity of the epitaxial grains of the same orientation to the reduced interfacial energy due to higher coincidence site density.

Original languageEnglish
Pages (from-to)1953-1956
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number4
Publication statusPublished - 2000 Dec 1

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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