MoS2 nanosheets for top-gate nonvolatile memory transistor channel

Hee Sung Lee, Sung Wook Min, Min Kyu Park, Young Tack Lee, Pyo Jin Jeon, Jae Hoon Kim, Sunmin Ryu, Seongil Im

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Abstract

Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 for the program/erase ratio and displaying a high mobility of ~220 cm2/(V·s).

Original languageEnglish
Pages (from-to)3111-3115
Number of pages5
JournalSmall
Volume8
Issue number20
DOIs
Publication statusPublished - 2012 Oct 22

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All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Engineering (miscellaneous)

Cite this

Lee, H. S., Min, S. W., Park, M. K., Lee, Y. T., Jeon, P. J., Kim, J. H., Ryu, S., & Im, S. (2012). MoS2 nanosheets for top-gate nonvolatile memory transistor channel. Small, 8(20), 3111-3115. https://doi.org/10.1002/smll.201200752