MoS2 nanosheets for top-gate nonvolatile memory transistor channel

Hee Sung Lee; Sung Wook Min; Min Kyu Park; Young Tack Lee; Pyo Jin Jeon; Jae Hoon Kim; Sunmin Ryu; Seongil Im

doi:10.1002/smll.201200752

MoS₂ nanosheets for top-gate nonvolatile memory transistor channel

Hee Sung Lee, Sung Wook Min, Min Kyu Park, Young Tack Lee, Pyo Jin Jeon, Jae Hoon Kim, Sunmin Ryu, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

211 Citations (Scopus)

Abstract

Top-gate ferroelectric memory transistors with single- to triple-layered MoS₂ nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS₂ channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 10³ for the program/erase ratio and displaying a high mobility of ~220 cm²/(VÂ·s).

Original language	English
Pages (from-to)	3111-3115
Number of pages	5
Journal	Small
Volume	8
Issue number	20
DOIs	https://doi.org/10.1002/smll.201200752
Publication status	Published - 2012 Oct 22

All Science Journal Classification (ASJC) codes

Biotechnology
Biomaterials
Chemistry(all)
Materials Science(all)

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10.1002/smll.201200752

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abstract = "Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 for the program/erase ratio and displaying a high mobility of ~220 cm2/(V{\^A}·s).",

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AU - Lee, Hee Sung

AU - Min, Sung Wook

AU - Park, Min Kyu

AU - Lee, Young Tack

AU - Jeon, Pyo Jin

AU - Kim, Jae Hoon

AU - Ryu, Sunmin

AU - Im, Seongil

PY - 2012/10/22

Y1 - 2012/10/22

N2 - Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 for the program/erase ratio and displaying a high mobility of ~220 cm2/(VÂ·s).

AB - Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 for the program/erase ratio and displaying a high mobility of ~220 cm2/(VÂ·s).

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MoS₂ nanosheets for top-gate nonvolatile memory transistor channel

Abstract

All Science Journal Classification (ASJC) codes

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