MoS2 nanosheets for top-gate nonvolatile memory transistor channel

Hee Sung Lee, Sung Wook Min, Min Kyu Park, Young Tack Lee, Pyo Jin Jeon, Jae Hoon Kim, Sunmin Ryu, Seongil Im

Research output: Contribution to journalArticlepeer-review

211 Citations (Scopus)


Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 for the program/erase ratio and displaying a high mobility of ~220 cm2/(V·s).

Original languageEnglish
Pages (from-to)3111-3115
Number of pages5
Issue number20
Publication statusPublished - 2012 Oct 22

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)


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