We developed MoS2 triboelectric nanogenerators (TENGs) using a large-sized monolayer MoS2 grown by chemical vapor deposition. To investigate the effect of a depletion layer formed across a Schottky or pn junction on the output performance of MoS2 TENGs, three types of TENGs having different contacts, i.e., an ohmic contact, a Schottky contact, and a pn junction, were investigated. During pressing, the TENGs with the Schottky contact and pn junction generated a higher power efficiency than that with the ohmic contact. Additionally, they exhibited self-rectified behaviors. This was ascribed to the diffusion of charges, which resulted in the formation of a depletion layer across the Schottky or pn junction. When ferroelectric polyvinylidene fluoride (PVDF) was used to transfer MoS2, the power efficiency of the TENGs with the Schottky contact or pn junction was further enhanced by the synergistic effect of the depletion layer and the ferroelectric PVDF.
Bibliographical noteFunding Information:
This work has been financially supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant Nos. 2016R1A2B3011980 and 2019R1H1A2080077 ).
© 2019 Elsevier Ltd
All Science Journal Classification (ASJC) codes
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Electrical and Electronic Engineering