Abstract
We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.
| Original language | English |
|---|---|
| Pages (from-to) | 33811-33820 |
| Number of pages | 10 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 8 |
| Issue number | 49 |
| DOIs | |
| Publication status | Published - 2016 Dec 14 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
Cite this
}
Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells. / Yi, Sum Gyun; Kim, Sung Hyun; Park, Sungjin; Oh, Donggun; Choi, Hwan Young; Lee, Nara; Choi, Young Jai; Yoo, Kyung-hwa.
In: ACS Applied Materials and Interfaces, Vol. 8, No. 49, 14.12.2016, p. 33811-33820.Research output: Contribution to journal › Article
TY - JOUR
T1 - Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells
AU - Yi, Sum Gyun
AU - Kim, Sung Hyun
AU - Park, Sungjin
AU - Oh, Donggun
AU - Choi, Hwan Young
AU - Lee, Nara
AU - Choi, Young Jai
AU - Yoo, Kyung-hwa
PY - 2016/12/14
Y1 - 2016/12/14
N2 - We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.
AB - We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.
UR - http://www.scopus.com/inward/record.url?scp=85006265715&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006265715&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b11768
DO - 10.1021/acsami.6b11768
M3 - Article
AN - SCOPUS:85006265715
VL - 8
SP - 33811
EP - 33820
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 49
ER -