Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells

Sum Gyun Yi; Sung Hyun Kim; Sungjin Park; Donggun Oh; Hwan Young Choi; Nara Lee; Young Jai Choi; Kyung Hwa Yoo

doi:10.1021/acsami.6b11768

Mo_1-xW_xSe₂-Based Schottky Junction Photovoltaic Cells

Sum Gyun Yi, Sung Hyun Kim, Sungjin Park, Donggun Oh, Hwan Young Choi, Nara Lee, Young Jai Choi, Kyung Hwa Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We developed Schottky junction photovoltaic cells based on multilayer Mo_1-xW_xSe₂ with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo_0.5W_0.5Se₂ Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe₂ and WSe₂ devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo_0.5W_0.5Se₂ devices. Furthermore, we showed that Mo_0.5W_0.5Se₂-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

Original language	English
Pages (from-to)	33811-33820
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	49
DOIs	https://doi.org/10.1021/acsami.6b11768
Publication status	Published - 2016 Dec 14

Bibliographical note

Funding Information:
This work was financially supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT, and Future Planning (Grant Nos. 2016R1A2B3011980 and 2012R1A4A1029061).

All Science Journal Classification (ASJC) codes

Materials Science(all)

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@article{1c80c2cf03ad49e087314b98bde0528c,

title = "Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells",

abstract = "We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.",

author = "Yi, {Sum Gyun} and Kim, {Sung Hyun} and Sungjin Park and Donggun Oh and Choi, {Hwan Young} and Nara Lee and Choi, {Young Jai} and Yoo, {Kyung Hwa}",

note = "Funding Information: This work was financially supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT, and Future Planning (Grant Nos. 2016R1A2B3011980 and 2012R1A4A1029061).",

year = "2016",

month = dec,

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doi = "10.1021/acsami.6b11768",

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AU - Yi, Sum Gyun

AU - Kim, Sung Hyun

AU - Park, Sungjin

AU - Oh, Donggun

AU - Choi, Hwan Young

AU - Lee, Nara

AU - Choi, Young Jai

AU - Yoo, Kyung Hwa

N1 - Funding Information: This work was financially supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT, and Future Planning (Grant Nos. 2016R1A2B3011980 and 2012R1A4A1029061).

PY - 2016/12/14

Y1 - 2016/12/14

N2 - We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

AB - We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

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