Mott-transition-based RRAM

Yue Wang, Kyung Mun Kang, Minjae Kim, Hong Sub Lee, Rainer Waser, Dirk Wouters, Regina Dittmann, J. Joshua Yang, Hyung Ho Park

Research output: Contribution to journalReview articlepeer-review

12 Citations (Scopus)

Abstract

Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.

Original languageEnglish
Pages (from-to)63-80
Number of pages18
JournalMaterials Today
Volume28
DOIs
Publication statusPublished - 2019 Sep

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program, No. 10068075: ‘Development of Mott-transition based forming-less non-volatile resistive switching memory & array’ as well as by the Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT ( 2018M3D1A1058536 ) and the Third Stage of the Brain Korea 21 Plus Project in 2019. Yue Wang would like to thank the China Scholarship Council (CSC) for financial support.

Funding Information:
This work was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program, No. 10068075: ?Development of Mott-transition based forming-less non-volatile resistive switching memory & array? as well as by the Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2018M3D1A1058536) and the Third Stage of the Brain Korea 21 Plus Project in 2019. Yue Wang would like to thank the China Scholarship Council (CSC) for financial support.

Publisher Copyright:
© 2019 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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