Mott-transition-based RRAM

Yue Wang, Kyung Mun Kang, Minjae Kim, Hong Sub Lee, Rainer Waser, Dirk Wouters, Regina Dittmann, J. Joshua Yang, Hyung Ho Park

Research output: Contribution to journalReview article

Abstract

Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.

Original languageEnglish
Pages (from-to)63-80
Number of pages18
JournalMaterials Today
Volume28
DOIs
Publication statusPublished - 2019 Sep

Fingerprint

random access memory
Data storage equipment
insulators
Neural networks
Bandwidth
Electric potential
Oxygen vacancies
Transition metals
bandwidth
Metals
electric potential
transition metals
valence

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Wang, Y., Kang, K. M., Kim, M., Lee, H. S., Waser, R., Wouters, D., ... Park, H. H. (2019). Mott-transition-based RRAM. Materials Today, 28, 63-80. https://doi.org/10.1016/j.mattod.2019.06.006
Wang, Yue ; Kang, Kyung Mun ; Kim, Minjae ; Lee, Hong Sub ; Waser, Rainer ; Wouters, Dirk ; Dittmann, Regina ; Yang, J. Joshua ; Park, Hyung Ho. / Mott-transition-based RRAM. In: Materials Today. 2019 ; Vol. 28. pp. 63-80.
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Wang, Y, Kang, KM, Kim, M, Lee, HS, Waser, R, Wouters, D, Dittmann, R, Yang, JJ & Park, HH 2019, 'Mott-transition-based RRAM', Materials Today, vol. 28, pp. 63-80. https://doi.org/10.1016/j.mattod.2019.06.006

Mott-transition-based RRAM. / Wang, Yue; Kang, Kyung Mun; Kim, Minjae; Lee, Hong Sub; Waser, Rainer; Wouters, Dirk; Dittmann, Regina; Yang, J. Joshua; Park, Hyung Ho.

In: Materials Today, Vol. 28, 09.2019, p. 63-80.

Research output: Contribution to journalReview article

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AU - Wang, Yue

AU - Kang, Kyung Mun

AU - Kim, Minjae

AU - Lee, Hong Sub

AU - Waser, Rainer

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AU - Dittmann, Regina

AU - Yang, J. Joshua

AU - Park, Hyung Ho

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Wang Y, Kang KM, Kim M, Lee HS, Waser R, Wouters D et al. Mott-transition-based RRAM. Materials Today. 2019 Sep;28:63-80. https://doi.org/10.1016/j.mattod.2019.06.006