Abstract
Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.
| Original language | English |
|---|---|
| Pages (from-to) | 63-80 |
| Number of pages | 18 |
| Journal | Materials Today |
| Volume | 28 |
| DOIs | |
| Publication status | Published - 2019 Sep |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Mott-transition-based RRAM. / Wang, Yue; Kang, Kyung Mun; Kim, Minjae; Lee, Hong Sub; Waser, Rainer; Wouters, Dirk; Dittmann, Regina; Yang, J. Joshua; Park, Hyung Ho.
In: Materials Today, Vol. 28, 09.2019, p. 63-80.Research output: Contribution to journal › Review article
TY - JOUR
T1 - Mott-transition-based RRAM
AU - Wang, Yue
AU - Kang, Kyung Mun
AU - Kim, Minjae
AU - Lee, Hong Sub
AU - Waser, Rainer
AU - Wouters, Dirk
AU - Dittmann, Regina
AU - Yang, J. Joshua
AU - Park, Hyung Ho
PY - 2019/9
Y1 - 2019/9
N2 - Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.
AB - Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.
UR - http://www.scopus.com/inward/record.url?scp=85069572224&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85069572224&partnerID=8YFLogxK
U2 - 10.1016/j.mattod.2019.06.006
DO - 10.1016/j.mattod.2019.06.006
M3 - Review article
AN - SCOPUS:85069572224
VL - 28
SP - 63
EP - 80
JO - Materials Today
JF - Materials Today
SN - 1369-7021
ER -