Multi-layer MoS2 FET with small hysteresis by using atomic layer deposition Al2O3 as gate insulator

Ah Jin Cho; Suk Yang; Kyung Park; Seok Daniel Namgung; Hojoong Kim; Jang Yeon Kwon

doi:10.1149/2.0111409ssl

Multi-layer MoS₂ FET with small hysteresis by using atomic layer deposition Al₂O₃ as gate insulator

Ah Jin Cho, Suk Yang, Kyung Park, Seok Daniel Namgung, Hojoong Kim, Jang Yeon Kwon

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Two-dimensionalmaterials like graphene have great potential to excess the mobility limit of conventional silicon devices. Particularly, MoS₂ FETs have high mobility and low off-current simultaneously due to their sizable band-gap. However, large hysteresis in its transfer curve is an obstacle for implementation to logic circuits and switching devices. Here, we report on a multi-layer MoS₂ FET using atomic layer deposition Al ₂O₃ as a gate insulator, showing small hysteresis of 0.86 V. It is thought that, such improvement in the hysteresis attributes to the small trap at the MoS₂/Al₂O₃ interface, and it is confirmed through a constant current stress test.

Original language	English
Pages (from-to)	Q67-Q69
Journal	ECS Solid State Letters
Volume	3
Issue number	10
DOIs	https://doi.org/10.1149/2.0111409ssl
Publication status	Published - 2014

Bibliographical note

Funding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea under the “IT Consilience Creative Program” (NIPA-2014-H0201-14-1002) supervised by the NIPA (National IT Industry Promotion Agency).

Funding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea under the "IT Consilience Creative Program" (NIPA-2014-H0201-14-1002) supervised by the NIPA (National IT Industry Promotion Agency).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1149/2.0111409ssl

Cite this

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title = "Multi-layer MoS2 FET with small hysteresis by using atomic layer deposition Al2O3 as gate insulator",

abstract = "Two-dimensionalmaterials like graphene have great potential to excess the mobility limit of conventional silicon devices. Particularly, MoS2 FETs have high mobility and low off-current simultaneously due to their sizable band-gap. However, large hysteresis in its transfer curve is an obstacle for implementation to logic circuits and switching devices. Here, we report on a multi-layer MoS2 FET using atomic layer deposition Al 2O3 as a gate insulator, showing small hysteresis of 0.86 V. It is thought that, such improvement in the hysteresis attributes to the small trap at the MoS2/Al2O3 interface, and it is confirmed through a constant current stress test.",

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AU - Cho, Ah Jin

AU - Yang, Suk

AU - Park, Kyung

AU - Namgung, Seok Daniel

AU - Kim, Hojoong

AU - Kwon, Jang Yeon

N1 - Funding Information: This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea under the “IT Consilience Creative Program” (NIPA-2014-H0201-14-1002) supervised by the NIPA (National IT Industry Promotion Agency). Funding Information: This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea under the "IT Consilience Creative Program" (NIPA-2014-H0201-14-1002) supervised by the NIPA (National IT Industry Promotion Agency).

PY - 2014

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AB - Two-dimensionalmaterials like graphene have great potential to excess the mobility limit of conventional silicon devices. Particularly, MoS2 FETs have high mobility and low off-current simultaneously due to their sizable band-gap. However, large hysteresis in its transfer curve is an obstacle for implementation to logic circuits and switching devices. Here, we report on a multi-layer MoS2 FET using atomic layer deposition Al 2O3 as a gate insulator, showing small hysteresis of 0.86 V. It is thought that, such improvement in the hysteresis attributes to the small trap at the MoS2/Al2O3 interface, and it is confirmed through a constant current stress test.

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