Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer

Sun Kak Hwang, Kang Lib Kim, Suk Man Cho, Tae Joon Park, Beomjin Jeong, Insung Bae, Cheolmin Park

Research output: Contribution to journalArticle

2 Citations (Scopus)


Carrier injection from the source electrode to the semiconducting channel in a field-effect transistor (FET) is efficiently enhanced by inserting an interlayer capable of reducing the injection barrier, yielding a device with a greatly increased ON current. In this study, we demonstrated a non-volatile vertical-channel (VC) ferroelectric field effect transistor (FeFET) memory based on ferroelectric polarization switching of a ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as a gate insulator with a thin MoO3 interlayer. Owing to the facile hole injection through the MoO3 interlayer to a semiconducting channel of the FeFET, the saturated ON current was significantly increased, giving rise to a large ON/OFF memory margin. Optimization of the VC-FeFET thus led to a non-volatile memory operating at a programming voltage of ±25 V with a maximum ON/OFF current margin of 103, reliable time-dependent data retention for more than 1 year, and write/erase endurance for 105 cycles. Furthermore, by sequentially stacking three arrays of VC-FeFETs with the hole-injection interlayers, we fabricated three-dimensionally (3D) stacked VC-FeFETs. Each device had a sufficient ON/OFF current ratio for multi-level memory operation, in which four distinct states were repetitively programmed and erased with long-term data retention and reliable cycle endurance.

Original languageEnglish
Article number105394
JournalOrganic Electronics
Publication statusPublished - 2019 Dec


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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