Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer

Sun Kak Hwang, Kang Lib Kim, Suk Man Cho, Tae Joon Park, Beomjin Jeong, Insung Bae, Cheolmin Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Carrier injection from the source electrode to the semiconducting channel in a field-effect transistor (FET) is efficiently enhanced by inserting an interlayer capable of reducing the injection barrier, yielding a device with a greatly increased ON current. In this study, we demonstrated a non-volatile vertical-channel (VC) ferroelectric field effect transistor (FeFET) memory based on ferroelectric polarization switching of a ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as a gate insulator with a thin MoO3 interlayer. Owing to the facile hole injection through the MoO3 interlayer to a semiconducting channel of the FeFET, the saturated ON current was significantly increased, giving rise to a large ON/OFF memory margin. Optimization of the VC-FeFET thus led to a non-volatile memory operating at a programming voltage of ±25 V with a maximum ON/OFF current margin of 103, reliable time-dependent data retention for more than 1 year, and write/erase endurance for 105 cycles. Furthermore, by sequentially stacking three arrays of VC-FeFETs with the hole-injection interlayers, we fabricated three-dimensionally (3D) stacked VC-FeFETs. Each device had a sufficient ON/OFF current ratio for multi-level memory operation, in which four distinct states were repetitively programmed and erased with long-term data retention and reliable cycle endurance.

Original languageEnglish
Article number105394
JournalOrganic Electronics
Volume75
DOIs
Publication statusPublished - 2019 Dec

Fingerprint

Ferroelectric materials
Polymers
Field effect transistors
injection
Data storage equipment
interlayers
polymers
field effect transistors
endurance
Durability
margins
cycles
Computer programming
carrier injection
vinylidene
programming
fluorides
Polarization
Electrodes
insulators

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Hwang, Sun Kak ; Kim, Kang Lib ; Cho, Suk Man ; Park, Tae Joon ; Jeong, Beomjin ; Bae, Insung ; Park, Cheolmin. / Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer. In: Organic Electronics. 2019 ; Vol. 75.
@article{4c90e94ffded472ebe6b3d112f266a88,
title = "Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer",
abstract = "Carrier injection from the source electrode to the semiconducting channel in a field-effect transistor (FET) is efficiently enhanced by inserting an interlayer capable of reducing the injection barrier, yielding a device with a greatly increased ON current. In this study, we demonstrated a non-volatile vertical-channel (VC) ferroelectric field effect transistor (FeFET) memory based on ferroelectric polarization switching of a ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as a gate insulator with a thin MoO3 interlayer. Owing to the facile hole injection through the MoO3 interlayer to a semiconducting channel of the FeFET, the saturated ON current was significantly increased, giving rise to a large ON/OFF memory margin. Optimization of the VC-FeFET thus led to a non-volatile memory operating at a programming voltage of ±25 V with a maximum ON/OFF current margin of 103, reliable time-dependent data retention for more than 1 year, and write/erase endurance for 105 cycles. Furthermore, by sequentially stacking three arrays of VC-FeFETs with the hole-injection interlayers, we fabricated three-dimensionally (3D) stacked VC-FeFETs. Each device had a sufficient ON/OFF current ratio for multi-level memory operation, in which four distinct states were repetitively programmed and erased with long-term data retention and reliable cycle endurance.",
author = "Hwang, {Sun Kak} and Kim, {Kang Lib} and Cho, {Suk Man} and Park, {Tae Joon} and Beomjin Jeong and Insung Bae and Cheolmin Park",
year = "2019",
month = "12",
doi = "10.1016/j.orgel.2019.105394",
language = "English",
volume = "75",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",

}

Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer. / Hwang, Sun Kak; Kim, Kang Lib; Cho, Suk Man; Park, Tae Joon; Jeong, Beomjin; Bae, Insung; Park, Cheolmin.

In: Organic Electronics, Vol. 75, 105394, 12.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer

AU - Hwang, Sun Kak

AU - Kim, Kang Lib

AU - Cho, Suk Man

AU - Park, Tae Joon

AU - Jeong, Beomjin

AU - Bae, Insung

AU - Park, Cheolmin

PY - 2019/12

Y1 - 2019/12

N2 - Carrier injection from the source electrode to the semiconducting channel in a field-effect transistor (FET) is efficiently enhanced by inserting an interlayer capable of reducing the injection barrier, yielding a device with a greatly increased ON current. In this study, we demonstrated a non-volatile vertical-channel (VC) ferroelectric field effect transistor (FeFET) memory based on ferroelectric polarization switching of a ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as a gate insulator with a thin MoO3 interlayer. Owing to the facile hole injection through the MoO3 interlayer to a semiconducting channel of the FeFET, the saturated ON current was significantly increased, giving rise to a large ON/OFF memory margin. Optimization of the VC-FeFET thus led to a non-volatile memory operating at a programming voltage of ±25 V with a maximum ON/OFF current margin of 103, reliable time-dependent data retention for more than 1 year, and write/erase endurance for 105 cycles. Furthermore, by sequentially stacking three arrays of VC-FeFETs with the hole-injection interlayers, we fabricated three-dimensionally (3D) stacked VC-FeFETs. Each device had a sufficient ON/OFF current ratio for multi-level memory operation, in which four distinct states were repetitively programmed and erased with long-term data retention and reliable cycle endurance.

AB - Carrier injection from the source electrode to the semiconducting channel in a field-effect transistor (FET) is efficiently enhanced by inserting an interlayer capable of reducing the injection barrier, yielding a device with a greatly increased ON current. In this study, we demonstrated a non-volatile vertical-channel (VC) ferroelectric field effect transistor (FeFET) memory based on ferroelectric polarization switching of a ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as a gate insulator with a thin MoO3 interlayer. Owing to the facile hole injection through the MoO3 interlayer to a semiconducting channel of the FeFET, the saturated ON current was significantly increased, giving rise to a large ON/OFF memory margin. Optimization of the VC-FeFET thus led to a non-volatile memory operating at a programming voltage of ±25 V with a maximum ON/OFF current margin of 103, reliable time-dependent data retention for more than 1 year, and write/erase endurance for 105 cycles. Furthermore, by sequentially stacking three arrays of VC-FeFETs with the hole-injection interlayers, we fabricated three-dimensionally (3D) stacked VC-FeFETs. Each device had a sufficient ON/OFF current ratio for multi-level memory operation, in which four distinct states were repetitively programmed and erased with long-term data retention and reliable cycle endurance.

UR - http://www.scopus.com/inward/record.url?scp=85070487270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070487270&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2019.105394

DO - 10.1016/j.orgel.2019.105394

M3 - Article

AN - SCOPUS:85070487270

VL - 75

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

M1 - 105394

ER -