Current verification methods for on-chip memory have been implemented using coverpoints that are generated based on a single operation. These coverpoints cannot consider the influence of other memory banks in a busy state. In this paper, we propose a method in which the coverpoints account for all operations executed on different memory banks. In addition, a new constrained random vector generation method is proposed to reduce the required random vectors for the multi-operation-based coverpoints. The simulation results on NAND flash memory show 100% coverage with 496,541 constrained random vectors indicating a reduction of 96.4% compared with conventional random vectors. Index Terms—Constrained random verification (CRV), functional verification, coverpoint, NAND flash, constrained random vectors.
Bibliographical notePublisher Copyright:
© 2015, Institute of Electronics Engineers of Korea. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering