Multi-stacked layer in the solution processing of hfo2 films to obtain superior electrical performance in liquid crystal devices

Seon Yeong Kim, Hong Gyu Park, Min Jae Cho, Dae Geun Yang, Dai Hyun Kim, Dae-Shik Seo

Research output: Contribution to journalArticle

Abstract

The use of an alignment layer between liquid crystals (LCs) and solution-processed inorganic materials has been studied primarily for its application to next generation display technologies. However, solution-processing results in porous films and defects. In this study, we used hafnium (IV) oxide (HfO2) alignment films in a multi-stacked layer (MSL) for a high performance device. Laminating the layer more, the density of the films and smoothed their roughness. These effects resulted from the low trapping rate of electrons and holes in the MSL. Therefore, the LCs were well-aligned in the MSL-based devices.

Original languageEnglish
JournalECS Solid State Letters
Volume3
Issue number4
DOIs
Publication statusPublished - 2014 Mar 14

Fingerprint

Liquid Crystals
Liquid crystals
Hafnium
Processing
Laminating
Oxides
Surface roughness
Display devices
Defects
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, Seon Yeong ; Park, Hong Gyu ; Cho, Min Jae ; Yang, Dae Geun ; Kim, Dai Hyun ; Seo, Dae-Shik. / Multi-stacked layer in the solution processing of hfo2 films to obtain superior electrical performance in liquid crystal devices. In: ECS Solid State Letters. 2014 ; Vol. 3, No. 4.
@article{fdc4850b98a34e67b842cd7f49ea9a3d,
title = "Multi-stacked layer in the solution processing of hfo2 films to obtain superior electrical performance in liquid crystal devices",
abstract = "The use of an alignment layer between liquid crystals (LCs) and solution-processed inorganic materials has been studied primarily for its application to next generation display technologies. However, solution-processing results in porous films and defects. In this study, we used hafnium (IV) oxide (HfO2) alignment films in a multi-stacked layer (MSL) for a high performance device. Laminating the layer more, the density of the films and smoothed their roughness. These effects resulted from the low trapping rate of electrons and holes in the MSL. Therefore, the LCs were well-aligned in the MSL-based devices.",
author = "Kim, {Seon Yeong} and Park, {Hong Gyu} and Cho, {Min Jae} and Yang, {Dae Geun} and Kim, {Dai Hyun} and Dae-Shik Seo",
year = "2014",
month = "3",
day = "14",
doi = "10.1149/2.004404ssl",
language = "English",
volume = "3",
journal = "ECS Solid State Letters",
issn = "2162-8742",
publisher = "The Electrochemical Society",
number = "4",

}

Multi-stacked layer in the solution processing of hfo2 films to obtain superior electrical performance in liquid crystal devices. / Kim, Seon Yeong; Park, Hong Gyu; Cho, Min Jae; Yang, Dae Geun; Kim, Dai Hyun; Seo, Dae-Shik.

In: ECS Solid State Letters, Vol. 3, No. 4, 14.03.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Multi-stacked layer in the solution processing of hfo2 films to obtain superior electrical performance in liquid crystal devices

AU - Kim, Seon Yeong

AU - Park, Hong Gyu

AU - Cho, Min Jae

AU - Yang, Dae Geun

AU - Kim, Dai Hyun

AU - Seo, Dae-Shik

PY - 2014/3/14

Y1 - 2014/3/14

N2 - The use of an alignment layer between liquid crystals (LCs) and solution-processed inorganic materials has been studied primarily for its application to next generation display technologies. However, solution-processing results in porous films and defects. In this study, we used hafnium (IV) oxide (HfO2) alignment films in a multi-stacked layer (MSL) for a high performance device. Laminating the layer more, the density of the films and smoothed their roughness. These effects resulted from the low trapping rate of electrons and holes in the MSL. Therefore, the LCs were well-aligned in the MSL-based devices.

AB - The use of an alignment layer between liquid crystals (LCs) and solution-processed inorganic materials has been studied primarily for its application to next generation display technologies. However, solution-processing results in porous films and defects. In this study, we used hafnium (IV) oxide (HfO2) alignment films in a multi-stacked layer (MSL) for a high performance device. Laminating the layer more, the density of the films and smoothed their roughness. These effects resulted from the low trapping rate of electrons and holes in the MSL. Therefore, the LCs were well-aligned in the MSL-based devices.

UR - http://www.scopus.com/inward/record.url?scp=84897787761&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897787761&partnerID=8YFLogxK

U2 - 10.1149/2.004404ssl

DO - 10.1149/2.004404ssl

M3 - Article

VL - 3

JO - ECS Solid State Letters

JF - ECS Solid State Letters

SN - 2162-8742

IS - 4

ER -