Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

Xu Cui, Gwan Hyoung Lee, Young Duck Kim, Ghidewon Arefe, Pinshane Y. Huang, Chul Ho Lee, Daniel A. Chenet, Xian Zhang, Lei Wang, Fan Ye, Filippo Pizzocchero, Bjarke S. Jessen, Kenji Watanabe, Takashi Taniguchi, David A. Muller, Tony Low, Philip Kim, James Hone

Research output: Contribution to journalArticle

588 Citations (Scopus)

Abstract

Atomically thin two-dimensional semiconductors such as MoS 2 hold great promise for electrical, optical and mechanical devices and display novel physical phenomena. However, the electron mobility of mono-and few-layer MoS 2 has so far been substantially below theoretically predicted limits, which has hampered efforts to observe its intrinsic quantum transport behaviours. Potential sources of disorder and scattering include defects such as sulphur vacancies in the MoS2 itself as well as extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering, we have developed here a van der Waals heterostructure device platform where MoS 2 layers are fully encapsulated within hexagonal boron nitride and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000cm 2 V -1 s -1 for six-layer MoS2 at low temperature, confirming that low-temperature performance in previous studies was limited by extrinsic interfacial impurities rather than bulk defects in the MoS2. We also observed Shubnikov-de Haas oscillations in high-mobility monolayer and few-layer MoS2. Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS 2.

Original languageEnglish
Pages (from-to)534-540
Number of pages7
JournalNature Nanotechnology
Volume10
Issue number6
DOIs
Publication statusPublished - 2015 Jun 6

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Heterojunctions
platforms
Scattering
scattering
Impurities
mechanical devices
impurities
Hall mobility
Defects
Graphite
Boron nitride
Electron mobility
defects
boron nitrides
Phonons
electron mobility
Sulfur
Temperature
Oxides
Graphene

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Cui, X., Lee, G. H., Kim, Y. D., Arefe, G., Huang, P. Y., Lee, C. H., ... Hone, J. (2015). Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nature Nanotechnology, 10(6), 534-540. https://doi.org/10.1038/nnano.2015.70
Cui, Xu ; Lee, Gwan Hyoung ; Kim, Young Duck ; Arefe, Ghidewon ; Huang, Pinshane Y. ; Lee, Chul Ho ; Chenet, Daniel A. ; Zhang, Xian ; Wang, Lei ; Ye, Fan ; Pizzocchero, Filippo ; Jessen, Bjarke S. ; Watanabe, Kenji ; Taniguchi, Takashi ; Muller, David A. ; Low, Tony ; Kim, Philip ; Hone, James. / Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. In: Nature Nanotechnology. 2015 ; Vol. 10, No. 6. pp. 534-540.
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Cui, X, Lee, GH, Kim, YD, Arefe, G, Huang, PY, Lee, CH, Chenet, DA, Zhang, X, Wang, L, Ye, F, Pizzocchero, F, Jessen, BS, Watanabe, K, Taniguchi, T, Muller, DA, Low, T, Kim, P & Hone, J 2015, 'Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform', Nature Nanotechnology, vol. 10, no. 6, pp. 534-540. https://doi.org/10.1038/nnano.2015.70

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. / Cui, Xu; Lee, Gwan Hyoung; Kim, Young Duck; Arefe, Ghidewon; Huang, Pinshane Y.; Lee, Chul Ho; Chenet, Daniel A.; Zhang, Xian; Wang, Lei; Ye, Fan; Pizzocchero, Filippo; Jessen, Bjarke S.; Watanabe, Kenji; Taniguchi, Takashi; Muller, David A.; Low, Tony; Kim, Philip; Hone, James.

In: Nature Nanotechnology, Vol. 10, No. 6, 06.06.2015, p. 534-540.

Research output: Contribution to journalArticle

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T1 - Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

AU - Cui, Xu

AU - Lee, Gwan Hyoung

AU - Kim, Young Duck

AU - Arefe, Ghidewon

AU - Huang, Pinshane Y.

AU - Lee, Chul Ho

AU - Chenet, Daniel A.

AU - Zhang, Xian

AU - Wang, Lei

AU - Ye, Fan

AU - Pizzocchero, Filippo

AU - Jessen, Bjarke S.

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Muller, David A.

AU - Low, Tony

AU - Kim, Philip

AU - Hone, James

PY - 2015/6/6

Y1 - 2015/6/6

N2 - Atomically thin two-dimensional semiconductors such as MoS 2 hold great promise for electrical, optical and mechanical devices and display novel physical phenomena. However, the electron mobility of mono-and few-layer MoS 2 has so far been substantially below theoretically predicted limits, which has hampered efforts to observe its intrinsic quantum transport behaviours. Potential sources of disorder and scattering include defects such as sulphur vacancies in the MoS2 itself as well as extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering, we have developed here a van der Waals heterostructure device platform where MoS 2 layers are fully encapsulated within hexagonal boron nitride and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000cm 2 V -1 s -1 for six-layer MoS2 at low temperature, confirming that low-temperature performance in previous studies was limited by extrinsic interfacial impurities rather than bulk defects in the MoS2. We also observed Shubnikov-de Haas oscillations in high-mobility monolayer and few-layer MoS2. Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS 2.

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