Multibit MoS2Photoelectronic Memory with Ultrahigh Sensitivity

Dain Lee; Euyheon Hwang; Youngbin Lee; Yongsuk Choi; Jong Su Kim; Seungwoo Lee; Jeong Ho Cho

doi:10.1002/adma.201603571

Multibit MoS₂Photoelectronic Memory with Ultrahigh Sensitivity

Dain Lee, Euyheon Hwang, Youngbin Lee, Yongsuk Choi, Jong Su Kim, Seungwoo Lee, Jeong Ho Cho

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

112 Citations (Scopus)

Original language	English
Pages (from-to)	9196-9202
Number of pages	7
Journal	Advanced Materials
Volume	28
Issue number	41
DOIs	https://doi.org/10.1002/adma.201603571
Publication status	Published - 2016 Nov

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201603571

Cite this

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title = "Multibit MoS2Photoelectronic Memory with Ultrahigh Sensitivity",

author = "Dain Lee and Euyheon Hwang and Youngbin Lee and Yongsuk Choi and Kim, {Jong Su} and Seungwoo Lee and Cho, {Jeong Ho}",

year = "2016",

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doi = "10.1002/adma.201603571",

language = "English",

volume = "28",

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journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

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AU - Lee, Dain

AU - Hwang, Euyheon

AU - Lee, Youngbin

AU - Choi, Yongsuk

AU - Kim, Jong Su

AU - Lee, Seungwoo

AU - Cho, Jeong Ho

PY - 2016/11

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DO - 10.1002/adma.201603571

M3 - Article

AN - SCOPUS:84983405512

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SP - 9196

EP - 9202

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 41

ER -

Multibit MoS2Photoelectronic Memory with Ultrahigh Sensitivity

All Science Journal Classification (ASJC) codes

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Multibit MoS₂Photoelectronic Memory with Ultrahigh Sensitivity