Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing

Min Seong Kim, Hyung Tae Kim, Hyukjoon Yoo, Dong Hyun Choi, Jeong Woo Park, Tae Sang Kim, Jun Hyung Lim, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


In this study, the oxygen scavenger layer (OSL) is proposed as a back channel in the bilayer channel to enhance both the electrical characteristics and stability of an amorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT) and also to enable its fabrication at low temperature. The OSL is a hafnium (Hf)-doped a-IGZO channel layer deposited by radio-frequency magnetron cosputtering. Amorphous IGZO TFTs with the OSL, even if annealed at a low temperature (200 °C), exhibited improved electrical characteristics and stability under positive bias temperature stress (PBTS) compared to those without the OSL, specifically in terms of field-effect mobility (31.08 vs 9.25 cm2/V s), on/off current ratio (1.73 × 1010 vs 8.68 × 108), and subthreshold swing (0.32 vs 0.43 V/decade). The threshold voltage shift under PBTS at 50 °C for 10,000 s decreased from 9.22 to 2.31 V. These enhancements are attributed to Hf in the OSL, which absorbs oxygen ions from the a-IGZO front channel near the interface between a-IGZO and the OSL.

Original languageEnglish
Pages (from-to)31816-31824
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number27
Publication statusPublished - 2021 Jul 14

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) (no. 2020M3H4A1A02084896) and Samsung Display.

Publisher Copyright:
© 2021 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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