Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors

Young Jun Tak, Scott Tom Keene, Byung Ha Kang, Won Gi Kim, Si Joon Kim, Alberto Salleo, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


In recent decades, oxide thin-film transistors (TFTs) have attracted a great deal of attention as a promising technology in terms of next-generation electronics due to their outstanding electrical performance. However, achieving robust electrical characteristics under various environments is a crucial challenge for successful realization of oxide-based electronic applications. To resolve the limitation, we propose a highly flexible and reliable heterogeneous organic passivation layer composed of stacked parylene-C and diketopyrrolopyrrole-polymer films for improving stability of oxide TFTs under various environments and mechanical stress. The presented multifunctional heterogeneous organic (MHO) passivation leads to high-performance oxide TFTs by: (1) improving their electrical characteristics, (2) protecting them from external reactive molecules, and (3) blocking light exposure to the oxide layer. As a result, oxide TFTs with MHO passivation exhibit outstanding stability in ambient air as well as under light illumination: the threshold voltage shift of the device is almost 0 V under severe negative bias illumination stress condition (white light of 5700 lx, gate voltage of -20 V, and drain voltage of 10.1 V for 20 »000 s). Furthermore, since the MHO passivation layer exhibits high mechanical stability at a bending radius of ≤5 mm and can be deposited at room temperature, this technique is expected to be useful in the fabrication of flexible/wearable devices.

Original languageEnglish
Pages (from-to)2615-2624
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number2
Publication statusPublished - 2020 Jan 15

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIP) (No. 2017R1A2B3008719). Part of this work was performed at the Stanford Nano Shared Facilities (SNSF) supported by the National Science Foundation (NSF) under award ECCS-1542152. S.T.K. and A.S. acknowledge financial support from the National Science Foundation (NSF) and Semiconductor Research Corporation (SRC), Award #1739795. Additionally, S.T.K. acknowledges the Stanford Office of Technology Licensing Stanford Graduate Fellowship fund (KAWBR-6037395) for support.

Publisher Copyright:
Copyright © 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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