Molybdenum disulfide nanosheet has recently been attracting much attention from researchers in respects of its relatively high mobility and distinct energy band gap of 1.2-1.8 eV, which is different from that of graphene, the gapless 2D semiconductor. The magnitude of molybdenum disulfide energy band gap is dependent on the nanosheet thickness. It is probably because researchers have been mainly interested in the Ohmic-Schottky contact issue of nanosheet FET sourcedrain, rather than in Schottky effect-driven device engineering. Hence, reports on the dynamic rectifications of diode type devices are even less to find yet and any diode circuit integrations for voltage output have not been shown, either.
All Science Journal Classification (ASJC) codes
- Materials Science(all)