Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability

Emmanuel Okogbue, Sang Sub Han, Tae Jun Ko, Hee Suk Chung, Jinwoo Ma, Mashiyat Sumaiya Shawkat, Jung Han Kim, Jong Hun Kim, Eunji Ji, Kyu Hwan Oh, Lei Zhai, Gwan-Hyoung Lee, Yeonwoong Jung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Two-dimensional transition-metal dichalcogenide (2D TMD) layers are highly attractive for emerging stretchable and foldable electronics owing to their extremely small thickness coupled with extraordinary electrical and optical properties. Although intrinsically large strain limits are projected in them (i.e., several times greater than silicon), integrating 2D TMDs in their pristine forms does not realize superior mechanical tolerance greatly demanded in high-end stretchable and foldable devices of unconventional form factors. In this article, we report a versatile and rational strategy to convert 2D TMDs of limited mechanical tolerance to tailored 3D structures with extremely large mechanical stretchability accompanying well-preserved electrical integrity and modulated transport properties. We employed a concept of strain engineering inspired by an ancient paper-cutting art, known as kirigami patterning, and developed 2D TMD-based kirigami electrical conductors. Specifically, we directly integrated 2D platinum diselenide (2D PtSe2) layers of controlled carrier transport characteristics on mechanically flexible polyimide (PI) substrates by taking advantage of their low synthesis temperature. The metallic 2D PtSe2/PI kirigami patterns of optimized dimensions exhibit an extremely large stretchability of ∼2000% without compromising their intrinsic electrical conductance. They also present strain-tunable and reversible photoresponsiveness when interfaced with semiconducting carbon nanotubes (CNTs), benefiting from the formation of 2D PtSe2/CNT Schottky junctions. Moreover, kirigami field-effect transistors (FETs) employing semiconducting 2D PtSe2 layers exhibit tunable gate responses coupled with mechanical stretching upon electrolyte gating. The exclusive role of the kirigami pattern parameters in the resulting mechanoelectrical responses was also verified by a finite-element modeling (FEM) simulation. These multifunctional 2D materials in unconventional yet tailored 3D forms are believed to offer vast opportunities for emerging electronics and optoelectronics.

Original languageEnglish
JournalNano letters
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Carbon Nanotubes
conductors
polyimides
Polyimides
emerging
Carbon nanotubes
Electronic equipment
carbon nanotubes
Carrier transport
arts
Silicon
Field effect transistors
Platinum
electronics
Optoelectronic devices
Transport properties
integrity
Electrolytes
Stretching
Transition metals

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Okogbue, Emmanuel ; Han, Sang Sub ; Ko, Tae Jun ; Chung, Hee Suk ; Ma, Jinwoo ; Shawkat, Mashiyat Sumaiya ; Kim, Jung Han ; Kim, Jong Hun ; Ji, Eunji ; Oh, Kyu Hwan ; Zhai, Lei ; Lee, Gwan-Hyoung ; Jung, Yeonwoong. / Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability. In: Nano letters. 2019.
@article{e2021e3f59f64950b7633b20a8482e9b,
title = "Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000{\%} Stretchability and Metallic-to-Semiconducting Tunability",
abstract = "Two-dimensional transition-metal dichalcogenide (2D TMD) layers are highly attractive for emerging stretchable and foldable electronics owing to their extremely small thickness coupled with extraordinary electrical and optical properties. Although intrinsically large strain limits are projected in them (i.e., several times greater than silicon), integrating 2D TMDs in their pristine forms does not realize superior mechanical tolerance greatly demanded in high-end stretchable and foldable devices of unconventional form factors. In this article, we report a versatile and rational strategy to convert 2D TMDs of limited mechanical tolerance to tailored 3D structures with extremely large mechanical stretchability accompanying well-preserved electrical integrity and modulated transport properties. We employed a concept of strain engineering inspired by an ancient paper-cutting art, known as kirigami patterning, and developed 2D TMD-based kirigami electrical conductors. Specifically, we directly integrated 2D platinum diselenide (2D PtSe2) layers of controlled carrier transport characteristics on mechanically flexible polyimide (PI) substrates by taking advantage of their low synthesis temperature. The metallic 2D PtSe2/PI kirigami patterns of optimized dimensions exhibit an extremely large stretchability of ∼2000{\%} without compromising their intrinsic electrical conductance. They also present strain-tunable and reversible photoresponsiveness when interfaced with semiconducting carbon nanotubes (CNTs), benefiting from the formation of 2D PtSe2/CNT Schottky junctions. Moreover, kirigami field-effect transistors (FETs) employing semiconducting 2D PtSe2 layers exhibit tunable gate responses coupled with mechanical stretching upon electrolyte gating. The exclusive role of the kirigami pattern parameters in the resulting mechanoelectrical responses was also verified by a finite-element modeling (FEM) simulation. These multifunctional 2D materials in unconventional yet tailored 3D forms are believed to offer vast opportunities for emerging electronics and optoelectronics.",
author = "Emmanuel Okogbue and Han, {Sang Sub} and Ko, {Tae Jun} and Chung, {Hee Suk} and Jinwoo Ma and Shawkat, {Mashiyat Sumaiya} and Kim, {Jung Han} and Kim, {Jong Hun} and Eunji Ji and Oh, {Kyu Hwan} and Lei Zhai and Gwan-Hyoung Lee and Yeonwoong Jung",
year = "2019",
month = "1",
day = "1",
doi = "10.1021/acs.nanolett.9b01726",
language = "English",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",

}

Okogbue, E, Han, SS, Ko, TJ, Chung, HS, Ma, J, Shawkat, MS, Kim, JH, Kim, JH, Ji, E, Oh, KH, Zhai, L, Lee, G-H & Jung, Y 2019, 'Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability', Nano letters. https://doi.org/10.1021/acs.nanolett.9b01726

Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability. / Okogbue, Emmanuel; Han, Sang Sub; Ko, Tae Jun; Chung, Hee Suk; Ma, Jinwoo; Shawkat, Mashiyat Sumaiya; Kim, Jung Han; Kim, Jong Hun; Ji, Eunji; Oh, Kyu Hwan; Zhai, Lei; Lee, Gwan-Hyoung; Jung, Yeonwoong.

In: Nano letters, 01.01.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability

AU - Okogbue, Emmanuel

AU - Han, Sang Sub

AU - Ko, Tae Jun

AU - Chung, Hee Suk

AU - Ma, Jinwoo

AU - Shawkat, Mashiyat Sumaiya

AU - Kim, Jung Han

AU - Kim, Jong Hun

AU - Ji, Eunji

AU - Oh, Kyu Hwan

AU - Zhai, Lei

AU - Lee, Gwan-Hyoung

AU - Jung, Yeonwoong

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Two-dimensional transition-metal dichalcogenide (2D TMD) layers are highly attractive for emerging stretchable and foldable electronics owing to their extremely small thickness coupled with extraordinary electrical and optical properties. Although intrinsically large strain limits are projected in them (i.e., several times greater than silicon), integrating 2D TMDs in their pristine forms does not realize superior mechanical tolerance greatly demanded in high-end stretchable and foldable devices of unconventional form factors. In this article, we report a versatile and rational strategy to convert 2D TMDs of limited mechanical tolerance to tailored 3D structures with extremely large mechanical stretchability accompanying well-preserved electrical integrity and modulated transport properties. We employed a concept of strain engineering inspired by an ancient paper-cutting art, known as kirigami patterning, and developed 2D TMD-based kirigami electrical conductors. Specifically, we directly integrated 2D platinum diselenide (2D PtSe2) layers of controlled carrier transport characteristics on mechanically flexible polyimide (PI) substrates by taking advantage of their low synthesis temperature. The metallic 2D PtSe2/PI kirigami patterns of optimized dimensions exhibit an extremely large stretchability of ∼2000% without compromising their intrinsic electrical conductance. They also present strain-tunable and reversible photoresponsiveness when interfaced with semiconducting carbon nanotubes (CNTs), benefiting from the formation of 2D PtSe2/CNT Schottky junctions. Moreover, kirigami field-effect transistors (FETs) employing semiconducting 2D PtSe2 layers exhibit tunable gate responses coupled with mechanical stretching upon electrolyte gating. The exclusive role of the kirigami pattern parameters in the resulting mechanoelectrical responses was also verified by a finite-element modeling (FEM) simulation. These multifunctional 2D materials in unconventional yet tailored 3D forms are believed to offer vast opportunities for emerging electronics and optoelectronics.

AB - Two-dimensional transition-metal dichalcogenide (2D TMD) layers are highly attractive for emerging stretchable and foldable electronics owing to their extremely small thickness coupled with extraordinary electrical and optical properties. Although intrinsically large strain limits are projected in them (i.e., several times greater than silicon), integrating 2D TMDs in their pristine forms does not realize superior mechanical tolerance greatly demanded in high-end stretchable and foldable devices of unconventional form factors. In this article, we report a versatile and rational strategy to convert 2D TMDs of limited mechanical tolerance to tailored 3D structures with extremely large mechanical stretchability accompanying well-preserved electrical integrity and modulated transport properties. We employed a concept of strain engineering inspired by an ancient paper-cutting art, known as kirigami patterning, and developed 2D TMD-based kirigami electrical conductors. Specifically, we directly integrated 2D platinum diselenide (2D PtSe2) layers of controlled carrier transport characteristics on mechanically flexible polyimide (PI) substrates by taking advantage of their low synthesis temperature. The metallic 2D PtSe2/PI kirigami patterns of optimized dimensions exhibit an extremely large stretchability of ∼2000% without compromising their intrinsic electrical conductance. They also present strain-tunable and reversible photoresponsiveness when interfaced with semiconducting carbon nanotubes (CNTs), benefiting from the formation of 2D PtSe2/CNT Schottky junctions. Moreover, kirigami field-effect transistors (FETs) employing semiconducting 2D PtSe2 layers exhibit tunable gate responses coupled with mechanical stretching upon electrolyte gating. The exclusive role of the kirigami pattern parameters in the resulting mechanoelectrical responses was also verified by a finite-element modeling (FEM) simulation. These multifunctional 2D materials in unconventional yet tailored 3D forms are believed to offer vast opportunities for emerging electronics and optoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=85068154792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068154792&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.9b01726

DO - 10.1021/acs.nanolett.9b01726

M3 - Article

AN - SCOPUS:85068154792

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

ER -