Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate

Zhaogang Nie; Heungyeol Lee; Hyeonggeun Yoo; Youlee Lee; Younshil Kim; Ki Soo Lim; Myeongkyu Lee

doi:10.1063/1.3103365

Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate

Zhaogang Nie, Heungyeol Lee, Hyeonggeun Yoo, Youlee Lee, Younshil Kim, Ki Soo Lim, Myeongkyu Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We report on the three-dimensional optical memory utilizing a photoluminescence (PL) change in polymethylmethacrylate. Irradiation with a femtosecond pulsed laser (800 nm, 1 kHz, 100 fs) induced a strong PL spectrum in the visible range, which may result from the photogeneration of emissive radicals. Multilayered patterns were recorded inside the bulk sample by tightly focusing a pulsed laser beam. The pattern images were read out by a reflection-type fluorescent confocal microscope which detected the blue-green emission at 410-510 nm. The stored bits were retrieved with a high signal-to-noise ratio in the absence of any cross-talk.

Original language	English
Article number	111912
Journal	Applied Physics Letters
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.3103365
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the grant (Grant No. R01-2006-000-11073-0) from the Basic Research Program of the Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3103365

Cite this

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title = "Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate",

abstract = "We report on the three-dimensional optical memory utilizing a photoluminescence (PL) change in polymethylmethacrylate. Irradiation with a femtosecond pulsed laser (800 nm, 1 kHz, 100 fs) induced a strong PL spectrum in the visible range, which may result from the photogeneration of emissive radicals. Multilayered patterns were recorded inside the bulk sample by tightly focusing a pulsed laser beam. The pattern images were read out by a reflection-type fluorescent confocal microscope which detected the blue-green emission at 410-510 nm. The stored bits were retrieved with a high signal-to-noise ratio in the absence of any cross-talk.",

author = "Zhaogang Nie and Heungyeol Lee and Hyeonggeun Yoo and Youlee Lee and Younshil Kim and Lim, {Ki Soo} and Myeongkyu Lee",

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AU - Nie, Zhaogang

AU - Lee, Heungyeol

AU - Yoo, Hyeonggeun

AU - Lee, Youlee

AU - Kim, Younshil

AU - Lim, Ki Soo

AU - Lee, Myeongkyu

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PY - 2009

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AB - We report on the three-dimensional optical memory utilizing a photoluminescence (PL) change in polymethylmethacrylate. Irradiation with a femtosecond pulsed laser (800 nm, 1 kHz, 100 fs) induced a strong PL spectrum in the visible range, which may result from the photogeneration of emissive radicals. Multilayered patterns were recorded inside the bulk sample by tightly focusing a pulsed laser beam. The pattern images were read out by a reflection-type fluorescent confocal microscope which detected the blue-green emission at 410-510 nm. The stored bits were retrieved with a high signal-to-noise ratio in the absence of any cross-talk.

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Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate

Abstract

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