Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate

Zhaogang Nie, Heungyeol Lee, Hyeonggeun Yoo, Youlee Lee, Younshil Kim, Ki Soo Lim, Myeongkyu Lee

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We report on the three-dimensional optical memory utilizing a photoluminescence (PL) change in polymethylmethacrylate. Irradiation with a femtosecond pulsed laser (800 nm, 1 kHz, 100 fs) induced a strong PL spectrum in the visible range, which may result from the photogeneration of emissive radicals. Multilayered patterns were recorded inside the bulk sample by tightly focusing a pulsed laser beam. The pattern images were read out by a reflection-type fluorescent confocal microscope which detected the blue-green emission at 410-510 nm. The stored bits were retrieved with a high signal-to-noise ratio in the absence of any cross-talk.

Original languageEnglish
Article number111912
JournalApplied Physics Letters
Volume94
Issue number11
DOIs
Publication statusPublished - 2009 Mar 31

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pulsed lasers
signal to noise ratios
photoluminescence
microscopes
laser beams
irradiation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Nie, Zhaogang ; Lee, Heungyeol ; Yoo, Hyeonggeun ; Lee, Youlee ; Kim, Younshil ; Lim, Ki Soo ; Lee, Myeongkyu. / Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate. In: Applied Physics Letters. 2009 ; Vol. 94, No. 11.
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Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate. / Nie, Zhaogang; Lee, Heungyeol; Yoo, Hyeonggeun; Lee, Youlee; Kim, Younshil; Lim, Ki Soo; Lee, Myeongkyu.

In: Applied Physics Letters, Vol. 94, No. 11, 111912, 31.03.2009.

Research output: Contribution to journalArticle

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