Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes

Ihn Hwang, Wei Wang, Sun Kak Hwang, Sung Hwan Cho, Kang Lib Kim, Beomjin Jeong, June Huh, Cheolmin Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-Trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.

Original languageEnglish
Pages (from-to)10273-10281
Number of pages9
JournalNanoscale
Volume8
Issue number19
DOIs
Publication statusPublished - 2016 May 21

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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