Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes

Engineering

• Charge Injection 33%
• Current Drain 33%
• Current Ratio 33%
• Cycles 33%
• Data Retention 33%
• Demonstrates 33%
• Field-Effect Transistor 33%
• Gate Voltage 100%
• Hysteresis 66%
• Hysteresis Curve 33%
• Long Time 33%
• Memory Performance 33%
• Mixed Water 33%
• Nonvolatile Memory 66%
• Passivation 33%
• Passivation Layer 66%
• Polymer 66%
• Resistive 33%
• Sensing Performance 33%
• Single-Walled Carbon Nanotube 100%
• Small Amount 33%
• Source Characteristic 33%
• Switching 33%
• Switching Time 33%
• Temperature 33%
• Transistor 66%
• Water 66%
• Zeros 33%

Computer Science

• Application Memory 33%
• Channels 66%
• Current-State 66%
• Data Retention 33%
• Hysteresis Curve 33%
• Information Storage 33%
• Memory Operation 33%
• Memory Performance 33%
• Non-Volatile Memory 66%
• Nonvolatile 33%
• Nonvolatile Data 33%
• Switching 33%

Material Science

• Air 33%
• Charge Trapping 33%
• Devices 66%
• Durability 33%
• Polymer 66%
• Solution 66%