We fabricated devices consisting of single and double graphene sheets embedded in organic polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Capacitance-voltage (C-V) curves and scanning capacitance microscopy (SCM) images were obtained to investigate the switching mechanism. The C-V curves exhibited a large hysteresis, implying that the graphene sheets acted as charging and discharging layers and that resistive switching was caused by charges trapped in the graphene layers. In addition, binary capacitive switching behaviors were observed for the device with a single graphene sheet, and ternary capacitive switching behaviors were observed for the device with the double graphene sheets. These results demonstrated that devices consisting of graphene sheets embedded in the polymer layers can be applied to multilevel nonvolatile memcapacitive devices as well as memristive devices.
Bibliographical noteFunding Information:
This work has been financially supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (Grant Nos. 2011-0017486 and 2012R1A4A1029061).
All Science Journal Classification (ASJC) codes
- Materials Science(all)