Multilevel Nonvolatile Memristive and Memcapacitive Switching in Stacked Graphene Sheets

Minji Park, Sungjin Park, Kyung Hwa Yoo

Research output: Contribution to journalArticle

15 Citations (Scopus)


We fabricated devices consisting of single and double graphene sheets embedded in organic polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Capacitance-voltage (C-V) curves and scanning capacitance microscopy (SCM) images were obtained to investigate the switching mechanism. The C-V curves exhibited a large hysteresis, implying that the graphene sheets acted as charging and discharging layers and that resistive switching was caused by charges trapped in the graphene layers. In addition, binary capacitive switching behaviors were observed for the device with a single graphene sheet, and ternary capacitive switching behaviors were observed for the device with the double graphene sheets. These results demonstrated that devices consisting of graphene sheets embedded in the polymer layers can be applied to multilevel nonvolatile memcapacitive devices as well as memristive devices.

Original languageEnglish
Pages (from-to)14046-14052
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number22
Publication statusPublished - 2016 Jun 8


All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this