Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure

Junyoung Kwon; June Chul Shin; Huije Ryu; Jae Yoon Lee; Dongjea Seo; Kenji Watanabe; Takashi Taniguchi; Young Duck Kim; James Hone; Chul Ho Lee; Gwan Hyoung Lee

doi:10.1002/adma.202003567

Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure

Junyoung Kwon, June Chul Shin, Huije Ryu, Jae Yoon Lee, Dongjea Seo, Kenji Watanabe, Takashi Taniguchi, Young Duck Kim, James Hone, Chul Ho Lee, Gwan Hyoung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

2D semiconductors have shown great potential for application to electrically tunable optoelectronics. Despite the strong excitonic photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDs), their efficient electroluminescence (EL) has not been achieved due to the low efficiency of charge injection and electron–hole recombination. Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monolayer WSe₂ channel and graphene contacts coupled with two top gates for selective and balanced injection of charge carriers are demonstrated. Visibly observable EL is achieved with the high external quantum efficiency of ≈6% at room temperature due to efficient recombination of injected electrons and holes in a confined 2D channel. Further, electrical tunability of both the channel and contacts enables multioperation modes, such as antiambipolar, depletion,and unipolar regions, which can be utilized for polarity-tunable field-effect transistors and photodetectors. The work exhibits great potential for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctions, and heterointegration.

Original language	English
Article number	2003567
Journal	Advanced Materials
Volume	32
Issue number	43
DOIs	https://doi.org/10.1002/adma.202003567
Publication status	Published - 2020 Oct 1

Bibliographical note

Funding Information:
This work was supported by Samsung Research Funding Center of Samsung Electronics under Project Number SRFC‐MA1502‐12, the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning by the Korean government (2018M3D1A1058793, 2019R1F1A1058420, 2020R1A2C2009389 and 2017R1A5A1014862, SRC program: vdWMRC center). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Numbers JP20H00354 and the CREST(JPMJCR15F3), JST. C.‐H.L. acknowledges the support from the KU‐KIST School Project. Synthesis of WSe at Columbia was supported by the NSF MRSEC program through the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR‐1420634). 2

Funding Information:
This work was supported by Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-MA1502-12, the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning by the Korean government (2018M3D1A1058793, 2019R1F1A1058420, 2020R1A2C2009389 and 2017R1A5A1014862, SRC program: vdWMRC center). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Numbers JP20H00354 and the CREST(JPMJCR15F3), JST. C.-H.L. acknowledges the support from the KU-KIST School Project. Synthesis of WSe2 at Columbia was supported by the NSF MRSEC program through the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR-1420634).

Publisher Copyright:
© 2020 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.202003567

Cite this

@article{787f87593648426c9fb630ba8140ea4a,

title = "Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure",

abstract = "2D semiconductors have shown great potential for application to electrically tunable optoelectronics. Despite the strong excitonic photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDs), their efficient electroluminescence (EL) has not been achieved due to the low efficiency of charge injection and electron–hole recombination. Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monolayer WSe2 channel and graphene contacts coupled with two top gates for selective and balanced injection of charge carriers are demonstrated. Visibly observable EL is achieved with the high external quantum efficiency of ≈6% at room temperature due to efficient recombination of injected electrons and holes in a confined 2D channel. Further, electrical tunability of both the channel and contacts enables multioperation modes, such as antiambipolar, depletion,and unipolar regions, which can be utilized for polarity-tunable field-effect transistors and photodetectors. The work exhibits great potential for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctions, and heterointegration.",

author = "Junyoung Kwon and Shin, {June Chul} and Huije Ryu and Lee, {Jae Yoon} and Dongjea Seo and Kenji Watanabe and Takashi Taniguchi and Kim, {Young Duck} and James Hone and Lee, {Chul Ho} and Lee, {Gwan Hyoung}",

note = "Funding Information: This work was supported by Samsung Research Funding Center of Samsung Electronics under Project Number SRFC‐MA1502‐12, the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning by the Korean government (2018M3D1A1058793, 2019R1F1A1058420, 2020R1A2C2009389 and 2017R1A5A1014862, SRC program: vdWMRC center). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Numbers JP20H00354 and the CREST(JPMJCR15F3), JST. C.‐H.L. acknowledges the support from the KU‐KIST School Project. Synthesis of WSe at Columbia was supported by the NSF MRSEC program through the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR‐1420634). 2 Funding Information: This work was supported by Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-MA1502-12, the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning by the Korean government (2018M3D1A1058793, 2019R1F1A1058420, 2020R1A2C2009389 and 2017R1A5A1014862, SRC program: vdWMRC center). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Numbers JP20H00354 and the CREST(JPMJCR15F3), JST. C.-H.L. acknowledges the support from the KU-KIST School Project. Synthesis of WSe2 at Columbia was supported by the NSF MRSEC program through the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR-1420634). Publisher Copyright: {\textcopyright} 2020 Wiley-VCH GmbH",

year = "2020",

month = oct,

day = "1",

doi = "10.1002/adma.202003567",

language = "English",

volume = "32",

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T1 - Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure

AU - Kwon, Junyoung

AU - Shin, June Chul

AU - Ryu, Huije

AU - Lee, Jae Yoon

AU - Seo, Dongjea

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Kim, Young Duck

AU - Hone, James

AU - Lee, Chul Ho

AU - Lee, Gwan Hyoung

N1 - Funding Information: This work was supported by Samsung Research Funding Center of Samsung Electronics under Project Number SRFC‐MA1502‐12, the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning by the Korean government (2018M3D1A1058793, 2019R1F1A1058420, 2020R1A2C2009389 and 2017R1A5A1014862, SRC program: vdWMRC center). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Numbers JP20H00354 and the CREST(JPMJCR15F3), JST. C.‐H.L. acknowledges the support from the KU‐KIST School Project. Synthesis of WSe at Columbia was supported by the NSF MRSEC program through the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR‐1420634). 2 Funding Information: This work was supported by Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-MA1502-12, the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning by the Korean government (2018M3D1A1058793, 2019R1F1A1058420, 2020R1A2C2009389 and 2017R1A5A1014862, SRC program: vdWMRC center). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Numbers JP20H00354 and the CREST(JPMJCR15F3), JST. C.-H.L. acknowledges the support from the KU-KIST School Project. Synthesis of WSe2 at Columbia was supported by the NSF MRSEC program through the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR-1420634). Publisher Copyright: © 2020 Wiley-VCH GmbH

PY - 2020/10/1

Y1 - 2020/10/1

N2 - 2D semiconductors have shown great potential for application to electrically tunable optoelectronics. Despite the strong excitonic photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDs), their efficient electroluminescence (EL) has not been achieved due to the low efficiency of charge injection and electron–hole recombination. Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monolayer WSe2 channel and graphene contacts coupled with two top gates for selective and balanced injection of charge carriers are demonstrated. Visibly observable EL is achieved with the high external quantum efficiency of ≈6% at room temperature due to efficient recombination of injected electrons and holes in a confined 2D channel. Further, electrical tunability of both the channel and contacts enables multioperation modes, such as antiambipolar, depletion,and unipolar regions, which can be utilized for polarity-tunable field-effect transistors and photodetectors. The work exhibits great potential for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctions, and heterointegration.

AB - 2D semiconductors have shown great potential for application to electrically tunable optoelectronics. Despite the strong excitonic photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDs), their efficient electroluminescence (EL) has not been achieved due to the low efficiency of charge injection and electron–hole recombination. Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monolayer WSe2 channel and graphene contacts coupled with two top gates for selective and balanced injection of charge carriers are demonstrated. Visibly observable EL is achieved with the high external quantum efficiency of ≈6% at room temperature due to efficient recombination of injected electrons and holes in a confined 2D channel. Further, electrical tunability of both the channel and contacts enables multioperation modes, such as antiambipolar, depletion,and unipolar regions, which can be utilized for polarity-tunable field-effect transistors and photodetectors. The work exhibits great potential for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctions, and heterointegration.

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Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure

Abstract

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