Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM

Taehui Na, Jung Pill Kim, Seung H. Kang, Seong Ook Jung

Research output: Contribution to journalArticle

6 Citations (Scopus)


Spin-transfer-torque random access memory (STT-RAM) has attracted much research interest because of its characteristics of nonvolatility (i.e., zero standby power) and small cell size (i.e., high density and high performance). As the technology node is scaled down, however, the sensing margin of the STT-RAM is degraded because of the increased process variation and reduced supply voltage. To improve the sensing margin, this brief focuses on a reference scheme design capable of reducing the reference resistance distribution. A multiple-cell reference (MCR) scheme is proposed that achieves the narrow reference resistance distribution. Moreover, the MCR scheme does not exhibit parasitic mismatch, regularity problem, read disturbance, and write current degradation, and it also has small area overhead.

Original languageEnglish
Article number7437498
Pages (from-to)2993-2997
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Issue number9
Publication statusPublished - 2016 Sep


All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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