Multiple parallel channels for improved resistance to repeated bending and unbending of amorphous indium–gallium–zinc oxide thin film transistors

Min Jung Lee, Su Jeong Lee, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A simple approach has been taken to improve the resistance to the repeated bending and unbending of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). Splitting a conventional thin film active layer of a-IGZO into numerous parallel quasi-one-dimensional sub-channels at micrometer scale, separated by relatively compliant gap regions, allowed improved flexibility of the overall device structure as well as lower strain in the active region. Such scheme resulted in somewhat degraded initial device performance due to the exposure of side walls of the quasi-one-dimensional sub-channels and possible damages there introduced during the photolithography process. However, inherent flexibility of the device structure as proposed herein worked favorably for at least 50 times longer device lifetime under repeated bending and unbending with the bending radius of 3 mm as compared to the reference device having a typical thin film active layer. It is therefore proposed that the device structure as adopted in this study can be a potential candidate for flexible thin film transistors.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalMicroelectronic Engineering
Volume179
DOIs
Publication statusPublished - 2017 Jul 5

Fingerprint

Zinc Oxide
Gallium
Indium
Thin film transistors
Zinc oxide
Oxide films
transistors
Thin films
oxides
Photolithography
thin films
gallium oxides
zinc oxides
indium
flexibility
photolithography
micrometers
damage
life (durability)
radii

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "A simple approach has been taken to improve the resistance to the repeated bending and unbending of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). Splitting a conventional thin film active layer of a-IGZO into numerous parallel quasi-one-dimensional sub-channels at micrometer scale, separated by relatively compliant gap regions, allowed improved flexibility of the overall device structure as well as lower strain in the active region. Such scheme resulted in somewhat degraded initial device performance due to the exposure of side walls of the quasi-one-dimensional sub-channels and possible damages there introduced during the photolithography process. However, inherent flexibility of the device structure as proposed herein worked favorably for at least 50 times longer device lifetime under repeated bending and unbending with the bending radius of 3 mm as compared to the reference device having a typical thin film active layer. It is therefore proposed that the device structure as adopted in this study can be a potential candidate for flexible thin film transistors.",
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Multiple parallel channels for improved resistance to repeated bending and unbending of amorphous indium–gallium–zinc oxide thin film transistors. / Lee, Min Jung; Lee, Su Jeong; Lee, Woong; Myoung, Jae Min.

In: Microelectronic Engineering, Vol. 179, 05.07.2017, p. 7-12.

Research output: Contribution to journalArticle

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AB - A simple approach has been taken to improve the resistance to the repeated bending and unbending of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). Splitting a conventional thin film active layer of a-IGZO into numerous parallel quasi-one-dimensional sub-channels at micrometer scale, separated by relatively compliant gap regions, allowed improved flexibility of the overall device structure as well as lower strain in the active region. Such scheme resulted in somewhat degraded initial device performance due to the exposure of side walls of the quasi-one-dimensional sub-channels and possible damages there introduced during the photolithography process. However, inherent flexibility of the device structure as proposed herein worked favorably for at least 50 times longer device lifetime under repeated bending and unbending with the bending radius of 3 mm as compared to the reference device having a typical thin film active layer. It is therefore proposed that the device structure as adopted in this study can be a potential candidate for flexible thin film transistors.

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