Abstract
A simple approach has been taken to improve the resistance to the repeated bending and unbending of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). Splitting a conventional thin film active layer of a-IGZO into numerous parallel quasi-one-dimensional sub-channels at micrometer scale, separated by relatively compliant gap regions, allowed improved flexibility of the overall device structure as well as lower strain in the active region. Such scheme resulted in somewhat degraded initial device performance due to the exposure of side walls of the quasi-one-dimensional sub-channels and possible damages there introduced during the photolithography process. However, inherent flexibility of the device structure as proposed herein worked favorably for at least 50 times longer device lifetime under repeated bending and unbending with the bending radius of 3 mm as compared to the reference device having a typical thin film active layer. It is therefore proposed that the device structure as adopted in this study can be a potential candidate for flexible thin film transistors.
| Original language | English |
|---|---|
| Pages (from-to) | 7-12 |
| Number of pages | 6 |
| Journal | Microelectronic Engineering |
| Volume | 179 |
| DOIs | |
| Publication status | Published - 2017 Jul 5 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
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Multiple parallel channels for improved resistance to repeated bending and unbending of amorphous indium–gallium–zinc oxide thin film transistors. / Lee, Min Jung; Lee, Su Jeong; Lee, Woong; Myoung, Jae Min.
In: Microelectronic Engineering, Vol. 179, 05.07.2017, p. 7-12.Research output: Contribution to journal › Article
TY - JOUR
T1 - Multiple parallel channels for improved resistance to repeated bending and unbending of amorphous indium–gallium–zinc oxide thin film transistors
AU - Lee, Min Jung
AU - Lee, Su Jeong
AU - Lee, Woong
AU - Myoung, Jae Min
PY - 2017/7/5
Y1 - 2017/7/5
N2 - A simple approach has been taken to improve the resistance to the repeated bending and unbending of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). Splitting a conventional thin film active layer of a-IGZO into numerous parallel quasi-one-dimensional sub-channels at micrometer scale, separated by relatively compliant gap regions, allowed improved flexibility of the overall device structure as well as lower strain in the active region. Such scheme resulted in somewhat degraded initial device performance due to the exposure of side walls of the quasi-one-dimensional sub-channels and possible damages there introduced during the photolithography process. However, inherent flexibility of the device structure as proposed herein worked favorably for at least 50 times longer device lifetime under repeated bending and unbending with the bending radius of 3 mm as compared to the reference device having a typical thin film active layer. It is therefore proposed that the device structure as adopted in this study can be a potential candidate for flexible thin film transistors.
AB - A simple approach has been taken to improve the resistance to the repeated bending and unbending of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). Splitting a conventional thin film active layer of a-IGZO into numerous parallel quasi-one-dimensional sub-channels at micrometer scale, separated by relatively compliant gap regions, allowed improved flexibility of the overall device structure as well as lower strain in the active region. Such scheme resulted in somewhat degraded initial device performance due to the exposure of side walls of the quasi-one-dimensional sub-channels and possible damages there introduced during the photolithography process. However, inherent flexibility of the device structure as proposed herein worked favorably for at least 50 times longer device lifetime under repeated bending and unbending with the bending radius of 3 mm as compared to the reference device having a typical thin film active layer. It is therefore proposed that the device structure as adopted in this study can be a potential candidate for flexible thin film transistors.
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U2 - 10.1016/j.mee.2017.04.008
DO - 10.1016/j.mee.2017.04.008
M3 - Article
AN - SCOPUS:85017561347
VL - 179
SP - 7
EP - 12
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -