Multiwafer vertical interconnects for three-dimensional integrated circuits

Rosa R. Lahiji, Katherine J. Herrick, Yongshik Lee, Alexandros Margomenos, Saeed Mohammadi, Linda P.B. Katehi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Low-loss multiwafer vertical interconnects appropriate for a microstrip-based circuit architecture are proposed. These transitions have been designed, fabricated, and measured for 100-μm-thick silicon and GaAs substrates separately. Experimental results show excellent performance up to 20 GHz, with extremely low insertion loss (better than 0.12 and 0.38 dB for the two different silicon designs and 0.2 dB for the GaAs transition), and very good return loss (reflection of better than 12.9 and 17.3 dB for the two silicon designs, respectively, and 13.6 dB for the GaAs design). Using a high-performance transition allows for a more power-efficient interconnect, while it enables denser packaging by stacking the substrates on top of each other, as today's technologies demand.

Original languageEnglish
Pages (from-to)2699-2705
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume54
Issue number6
DOIs
Publication statusPublished - 2006 Jun 1

Fingerprint

integrated circuits
Silicon
silicon
Substrates
Insertion losses
insertion loss
packaging
Packaging
Networks (circuits)
Three dimensional integrated circuits

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lahiji, Rosa R. ; Herrick, Katherine J. ; Lee, Yongshik ; Margomenos, Alexandros ; Mohammadi, Saeed ; Katehi, Linda P.B. / Multiwafer vertical interconnects for three-dimensional integrated circuits. In: IEEE Transactions on Microwave Theory and Techniques. 2006 ; Vol. 54, No. 6. pp. 2699-2705.
@article{84d802071f7842dfb0ddcc055e36bf66,
title = "Multiwafer vertical interconnects for three-dimensional integrated circuits",
abstract = "Low-loss multiwafer vertical interconnects appropriate for a microstrip-based circuit architecture are proposed. These transitions have been designed, fabricated, and measured for 100-μm-thick silicon and GaAs substrates separately. Experimental results show excellent performance up to 20 GHz, with extremely low insertion loss (better than 0.12 and 0.38 dB for the two different silicon designs and 0.2 dB for the GaAs transition), and very good return loss (reflection of better than 12.9 and 17.3 dB for the two silicon designs, respectively, and 13.6 dB for the GaAs design). Using a high-performance transition allows for a more power-efficient interconnect, while it enables denser packaging by stacking the substrates on top of each other, as today's technologies demand.",
author = "Lahiji, {Rosa R.} and Herrick, {Katherine J.} and Yongshik Lee and Alexandros Margomenos and Saeed Mohammadi and Katehi, {Linda P.B.}",
year = "2006",
month = "6",
day = "1",
doi = "10.1109/TMTT.2006.874867",
language = "English",
volume = "54",
pages = "2699--2705",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Multiwafer vertical interconnects for three-dimensional integrated circuits. / Lahiji, Rosa R.; Herrick, Katherine J.; Lee, Yongshik; Margomenos, Alexandros; Mohammadi, Saeed; Katehi, Linda P.B.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 54, No. 6, 01.06.2006, p. 2699-2705.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Multiwafer vertical interconnects for three-dimensional integrated circuits

AU - Lahiji, Rosa R.

AU - Herrick, Katherine J.

AU - Lee, Yongshik

AU - Margomenos, Alexandros

AU - Mohammadi, Saeed

AU - Katehi, Linda P.B.

PY - 2006/6/1

Y1 - 2006/6/1

N2 - Low-loss multiwafer vertical interconnects appropriate for a microstrip-based circuit architecture are proposed. These transitions have been designed, fabricated, and measured for 100-μm-thick silicon and GaAs substrates separately. Experimental results show excellent performance up to 20 GHz, with extremely low insertion loss (better than 0.12 and 0.38 dB for the two different silicon designs and 0.2 dB for the GaAs transition), and very good return loss (reflection of better than 12.9 and 17.3 dB for the two silicon designs, respectively, and 13.6 dB for the GaAs design). Using a high-performance transition allows for a more power-efficient interconnect, while it enables denser packaging by stacking the substrates on top of each other, as today's technologies demand.

AB - Low-loss multiwafer vertical interconnects appropriate for a microstrip-based circuit architecture are proposed. These transitions have been designed, fabricated, and measured for 100-μm-thick silicon and GaAs substrates separately. Experimental results show excellent performance up to 20 GHz, with extremely low insertion loss (better than 0.12 and 0.38 dB for the two different silicon designs and 0.2 dB for the GaAs transition), and very good return loss (reflection of better than 12.9 and 17.3 dB for the two silicon designs, respectively, and 13.6 dB for the GaAs design). Using a high-performance transition allows for a more power-efficient interconnect, while it enables denser packaging by stacking the substrates on top of each other, as today's technologies demand.

UR - http://www.scopus.com/inward/record.url?scp=33947402291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947402291&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2006.874867

DO - 10.1109/TMTT.2006.874867

M3 - Article

AN - SCOPUS:33947402291

VL - 54

SP - 2699

EP - 2705

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 6

ER -