Multiwafer vertical interconnects for three-dimensional integrated circuits

Rosa R. Lahiji, Katherine J. Herrick, Yongshik Lee, Alexandros Margomenos, Saeed Mohammadi, Linda P.B. Katehi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Low-loss multiwafer vertical interconnects appropriate for a microstrip-based circuit architecture are proposed. These transitions have been designed, fabricated, and measured for 100-μm-thick silicon and GaAs substrates separately. Experimental results show excellent performance up to 20 GHz, with extremely low insertion loss (better than 0.12 and 0.38 dB for the two different silicon designs and 0.2 dB for the GaAs transition), and very good return loss (reflection of better than 12.9 and 17.3 dB for the two silicon designs, respectively, and 13.6 dB for the GaAs design). Using a high-performance transition allows for a more power-efficient interconnect, while it enables denser packaging by stacking the substrates on top of each other, as today's technologies demand.

Original languageEnglish
Pages (from-to)2699-2705
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume54
Issue number6
DOIs
Publication statusPublished - 2006 Jun

Bibliographical note

Funding Information:
Manuscript received October 12, 2005; revised February 4, 2006. This work was supported by the Defense Advanced Research Project Agency and managed by the Air Force Research Laboratory, Sensors Directorate, Aerospace Components and Subsystems Division, Wright Patterson AFB under the Intelligent RF-Front End Program. R. R. Lahiji, S. Mohammadi, and L. P. B. Katehi are with the School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 USA (e-mail: rrlahiji@purdue.edu). K. J. Herrick is with Raytheon RF Components, Andover, MA 01810 USA. Y. Lee is with the School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea. A. Margomenos is with EMAG Technologies Inc., Ann Arbor, MI 48108 USA. Digital Object Identifier 10.1109/TMTT.2006.874867

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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