Abstract
The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.
Original language | English |
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Pages (from-to) | 657-662 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 660 |
DOIs | |
Publication status | Published - 2018 Aug 30 |
Bibliographical note
Funding Information:This study was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075, "Development of Mott-transition based forming-less non-volatile resistive switching memory & array". Experiments at PLS were supported in part by MEST and POSTECH.
Funding Information:
This study was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075 , "Development of Mott-transition based forming-less non-volatile resistive switching memory & array". Experiments at PLS were supported in part by MEST and POSTECH .
Publisher Copyright:
© 2018 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry