N-doped Al2O3 thin films deposited by atomic layer deposition

Minjae Kim, Kyung Mun Kang, Yue Wang, Hyung Ho Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.

Original languageEnglish
Pages (from-to)657-662
Number of pages6
JournalThin Solid Films
Volume660
DOIs
Publication statusPublished - 2018 Aug 30

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Nitrogen
Doping (additives)
Oxygen
nitrogen
Leakage currents
Thin films
oxygen
leakage
thin films
Defects
Spectroscopic analysis
defects
spectroscopic analysis
Film growth
Photoelectrons
Temperature
Surface morphology
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Minjae ; Kang, Kyung Mun ; Wang, Yue ; Park, Hyung Ho. / N-doped Al2O3 thin films deposited by atomic layer deposition. In: Thin Solid Films. 2018 ; Vol. 660. pp. 657-662.
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N-doped Al2O3 thin films deposited by atomic layer deposition. / Kim, Minjae; Kang, Kyung Mun; Wang, Yue; Park, Hyung Ho.

In: Thin Solid Films, Vol. 660, 30.08.2018, p. 657-662.

Research output: Contribution to journalArticle

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AU - Park, Hyung Ho

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AB - The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.

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