N-doped Al2O3 thin films deposited by atomic layer deposition

Minjae Kim; Kyung Mun Kang; Yue Wang; Hyung Ho Park

doi:10.1016/j.tsf.2018.04.021

N-doped Al₂O₃ thin films deposited by atomic layer deposition

Minjae Kim, Kyung Mun Kang, Yue Wang, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The present study focused on nitrogen doped Al₂O₃ thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al₂O₃ thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al₂O₃ decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al₂O₃ film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10⁻¹⁰ A/cm²) was observed for N-doped Al₂O₃ film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.

Original language	English
Pages (from-to)	657-662
Number of pages	6
Journal	Thin Solid Films
Volume	660
DOIs	https://doi.org/10.1016/j.tsf.2018.04.021
Publication status	Published - 2018 Aug 30

Bibliographical note

Funding Information:
This study was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075, "Development of Mott-transition based forming-less non-volatile resistive switching memory & array". Experiments at PLS were supported in part by MEST and POSTECH.

Funding Information:
This study was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075 , "Development of Mott-transition based forming-less non-volatile resistive switching memory & array". Experiments at PLS were supported in part by MEST and POSTECH .

Publisher Copyright:
© 2018 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2018.04.021

Cite this

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title = "N-doped Al2O3 thin films deposited by atomic layer deposition",

abstract = "The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.",

author = "Minjae Kim and Kang, {Kyung Mun} and Yue Wang and Park, {Hyung Ho}",

note = "Funding Information: This study was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075, {"}Development of Mott-transition based forming-less non-volatile resistive switching memory & array{"}. Experiments at PLS were supported in part by MEST and POSTECH. Funding Information: This study was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075 , {"}Development of Mott-transition based forming-less non-volatile resistive switching memory & array{"}. Experiments at PLS were supported in part by MEST and POSTECH . Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

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AU - Kim, Minjae

AU - Kang, Kyung Mun

AU - Wang, Yue

AU - Park, Hyung Ho

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PY - 2018/8/30

Y1 - 2018/8/30

N2 - The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.

AB - The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.

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