Abstract
The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.
| Original language | English |
|---|---|
| Pages (from-to) | 657-662 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 660 |
| DOIs | |
| Publication status | Published - 2018 Aug 30 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
}
N-doped Al2O3 thin films deposited by atomic layer deposition. / Kim, Minjae; Kang, Kyung Mun; Wang, Yue; Park, Hyung Ho.
In: Thin Solid Films, Vol. 660, 30.08.2018, p. 657-662.Research output: Contribution to journal › Article
TY - JOUR
T1 - N-doped Al2O3 thin films deposited by atomic layer deposition
AU - Kim, Minjae
AU - Kang, Kyung Mun
AU - Wang, Yue
AU - Park, Hyung Ho
PY - 2018/8/30
Y1 - 2018/8/30
N2 - The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.
AB - The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5 × 10−10 A/cm2) was observed for N-doped Al2O3 film deposited at 170 °C and post-annealed at 400 °C, including a decrease by 10 times through N-doping.
UR - http://www.scopus.com/inward/record.url?scp=85046121690&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85046121690&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2018.04.021
DO - 10.1016/j.tsf.2018.04.021
M3 - Article
AN - SCOPUS:85046121690
VL - 660
SP - 657
EP - 662
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -