N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures

S. K. Kang; J. J. Kim; B. G. Kim; D. H. Ko; H. B. Kang; C. W. Yang

doi:10.1149/1.1539502

N-type dopant activation behaviors in poly Si_1-xGe_x films with Ge contents and activation temperatures

S. K. Kang, J. J. Kim, B. G. Kim, D. H. Ko, H. B. Kang, C. W. Yang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated the electrical properties and microstructures of n-type doped Si_1-xGe_x films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si_1-xGe_x films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si_1-xGe_x films.

Original language	English
Pages (from-to)	G173-G176
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	3
DOIs	https://doi.org/10.1149/1.1539502
Publication status	Published - 2003 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

Access to Document

10.1149/1.1539502

Fingerprint Dive into the research topics of 'N-type dopant activation behaviors in poly Si<sub>1-x</sub>Ge<sub>x</sub> films with Ge contents and activation temperatures'. Together they form a unique fingerprint.

Cite this

@article{a05dd528bdda42e3bec322f0dd68fd56,

title = "N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures",

abstract = "We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.",

author = "Kang, {S. K.} and Kim, {J. J.} and Kim, {B. G.} and Ko, {D. H.} and Kang, {H. B.} and Yang, {C. W.}",

year = "2003",

month = mar,

doi = "10.1149/1.1539502",

language = "English",

volume = "150",

pages = "G173--G176",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "3",

}

TY - JOUR

T1 - N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures

AU - Kang, S. K.

AU - Kim, J. J.

AU - Kim, B. G.

AU - Ko, D. H.

AU - Kang, H. B.

AU - Yang, C. W.

PY - 2003/3

Y1 - 2003/3

N2 - We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.

AB - We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.

UR - http://www.scopus.com/inward/record.url?scp=0037352206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037352206&partnerID=8YFLogxK

U2 - 10.1149/1.1539502

DO - 10.1149/1.1539502

M3 - Article

AN - SCOPUS:0037352206

VL - 150

SP - G173-G176

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 3

ER -