Abstract
We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.
| Original language | English |
|---|---|
| Pages (from-to) | G173-G176 |
| Journal | Journal of the Electrochemical Society |
| Volume | 150 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2003 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures. / Kang, S. K.; Kim, J. J.; Kim, B. G.; Ko, D. H.; Kang, H. B.; Yang, C. W.
In: Journal of the Electrochemical Society, Vol. 150, No. 3, 01.03.2003, p. G173-G176.Research output: Contribution to journal › Article
TY - JOUR
T1 - N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures
AU - Kang, S. K.
AU - Kim, J. J.
AU - Kim, B. G.
AU - Ko, D. H.
AU - Kang, H. B.
AU - Yang, C. W.
PY - 2003/3/1
Y1 - 2003/3/1
N2 - We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.
AB - We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.
UR - http://www.scopus.com/inward/record.url?scp=0037352206&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037352206&partnerID=8YFLogxK
U2 - 10.1149/1.1539502
DO - 10.1149/1.1539502
M3 - Article
AN - SCOPUS:0037352206
VL - 150
SP - G173-G176
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 3
ER -