N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures

S. K. Kang, J. J. Kim, B. G. Kim, D. H. Ko, H. B. Kang, C. W. Yang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.

Original languageEnglish
Pages (from-to)G173-G176
JournalJournal of the Electrochemical Society
Volume150
Issue number3
DOIs
Publication statusPublished - 2003 Mar 1

Fingerprint

Chemical activation
Doping (additives)
Carrier concentration
Carrier mobility
Sheet resistance
Arsenic
MOSFET devices
Temperature
Electric properties
Solubility
Transmission electron microscopy
Microstructure
Electrodes
X-Ray Emission Spectrometry

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kang, S. K. ; Kim, J. J. ; Kim, B. G. ; Ko, D. H. ; Kang, H. B. ; Yang, C. W. / N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures. In: Journal of the Electrochemical Society. 2003 ; Vol. 150, No. 3. pp. G173-G176.
@article{a05dd528bdda42e3bec322f0dd68fd56,
title = "N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures",
abstract = "We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.",
author = "Kang, {S. K.} and Kim, {J. J.} and Kim, {B. G.} and Ko, {D. H.} and Kang, {H. B.} and Yang, {C. W.}",
year = "2003",
month = "3",
day = "1",
doi = "10.1149/1.1539502",
language = "English",
volume = "150",
pages = "G173--G176",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "3",

}

N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures. / Kang, S. K.; Kim, J. J.; Kim, B. G.; Ko, D. H.; Kang, H. B.; Yang, C. W.

In: Journal of the Electrochemical Society, Vol. 150, No. 3, 01.03.2003, p. G173-G176.

Research output: Contribution to journalArticle

TY - JOUR

T1 - N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures

AU - Kang, S. K.

AU - Kim, J. J.

AU - Kim, B. G.

AU - Ko, D. H.

AU - Kang, H. B.

AU - Yang, C. W.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.

AB - We investigated the electrical properties and microstructures of n-type doped Si1-xGex films with Ge contents using hall measurement, four-point probe, transmission electron microscopy, and energy dispersive X-ray spectrometry to apply to gate electrode of complementary metal oxide semiconductor field effect transistor. The sheet resistance of poly Si1-xGex films implanted with arsenic decreased with the decrease of Ge content and the increase of activation temperature due to the increase of carrier mobility and activated carrier concentration. In addition, we found that the segregation of dopant increased at the grain edge and the activated carrier concentration decreased with the increase of Ge content due to higher diffusivity and lower solid solubility limit of As in poly Si1-xGex films.

UR - http://www.scopus.com/inward/record.url?scp=0037352206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037352206&partnerID=8YFLogxK

U2 - 10.1149/1.1539502

DO - 10.1149/1.1539502

M3 - Article

AN - SCOPUS:0037352206

VL - 150

SP - G173-G176

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 3

ER -