N-ZnO

N/p-Si nanowire photodiode prepared by atomic layer deposition

Hyemin Kang, Jusang Park, Taejin Choi, Hanearl Jung, Kwang H. Lee, Seongil Im, Hyungjun Kim

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion.

Original languageEnglish
Article number041117
JournalApplied Physics Letters
Volume100
Issue number4
DOIs
Publication statusPublished - 2012 Jan 23

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atomic layer epitaxy
photodiodes
nanowires
junction diodes
p-n junctions
depletion
diodes
etching
nitrogen
sensitivity

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kang, Hyemin ; Park, Jusang ; Choi, Taejin ; Jung, Hanearl ; Lee, Kwang H. ; Im, Seongil ; Kim, Hyungjun. / N-ZnO : N/p-Si nanowire photodiode prepared by atomic layer deposition. In: Applied Physics Letters. 2012 ; Vol. 100, No. 4.
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N-ZnO : N/p-Si nanowire photodiode prepared by atomic layer deposition. / Kang, Hyemin; Park, Jusang; Choi, Taejin; Jung, Hanearl; Lee, Kwang H.; Im, Seongil; Kim, Hyungjun.

In: Applied Physics Letters, Vol. 100, No. 4, 041117, 23.01.2012.

Research output: Contribution to journalArticle

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AU - Kang, Hyemin

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