N-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition

Hyemin Kang; Jusang Park; Taejin Choi; Hanearl Jung; Kwang H. Lee; Seongil Im; Hyungjun Kim

doi:10.1063/1.3679078

N-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition

Hyemin Kang, Jusang Park, Taejin Choi, Hanearl Jung, Kwang H. Lee, Seongil Im, Hyungjun Kim

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion.

Original language	English
Article number	041117
Journal	Applied Physics Letters
Volume	100
Issue number	4
DOIs	https://doi.org/10.1063/1.3679078
Publication status	Published - 2012 Jan 23

Bibliographical note

Funding Information:
This research was supported by Future-based Technology Development Program (Nano Fields), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Converging Research Center Program through the Ministry of Education, Science and Technology (Nos. 2011-0019151, 2011-0026228, and 2011K000621). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0028594)

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3679078

Cite this

@article{3bbd5caa34ba4e5698db4d62def184cc,

title = "N-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition",

abstract = "Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion.",

author = "Hyemin Kang and Jusang Park and Taejin Choi and Hanearl Jung and Lee, {Kwang H.} and Seongil Im and Hyungjun Kim",

note = "Funding Information: This research was supported by Future-based Technology Development Program (Nano Fields), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Converging Research Center Program through the Ministry of Education, Science and Technology (Nos. 2011-0019151, 2011-0026228, and 2011K000621). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0028594)",

year = "2012",

month = jan,

day = "23",

doi = "10.1063/1.3679078",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - N-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition

AU - Kang, Hyemin

AU - Park, Jusang

AU - Choi, Taejin

AU - Jung, Hanearl

AU - Lee, Kwang H.

AU - Im, Seongil

AU - Kim, Hyungjun

N1 - Funding Information: This research was supported by Future-based Technology Development Program (Nano Fields), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Converging Research Center Program through the Ministry of Education, Science and Technology (Nos. 2011-0019151, 2011-0026228, and 2011K000621). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0028594)

PY - 2012/1/23

Y1 - 2012/1/23

N2 - Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion.

AB - Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion.

UR - http://www.scopus.com/inward/record.url?scp=84863071674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863071674&partnerID=8YFLogxK

U2 - 10.1063/1.3679078

DO - 10.1063/1.3679078

M3 - Article

AN - SCOPUS:84863071674

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041117

ER -

N-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this