N-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition

Hyemin Kang, Jusang Park, Taejin Choi, Hanearl Jung, Kwang H. Lee, Seongil Im, Hyungjun Kim

Research output: Contribution to journalArticle

30 Citations (Scopus)


Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion.

Original languageEnglish
Article number041117
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2012 Jan 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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