Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion.
Bibliographical noteFunding Information:
This research was supported by Future-based Technology Development Program (Nano Fields), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Converging Research Center Program through the Ministry of Education, Science and Technology (Nos. 2011-0019151, 2011-0026228, and 2011K000621). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0028594)
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)