n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

C. H. Park, J. Y. Lee, S. Im, T. G. Kim

Research output: Contribution to journalConference article

17 Citations (Scopus)

Abstract

We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×1013, 5×1014 and 5×1015 cm-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50% were obtained from our new n-ZnO/p-Si photodiode.

Original languageEnglish
Pages (from-to)432-435
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - 2003 May 1
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: 2002 Sep 12002 Sep 6

Fingerprint

Photodiodes
Ion beams
photodiodes
isolation
ion beams
dosage
Quantum efficiency
Leakage currents
Magnetron sputtering
quantum efficiency
magnetron sputtering
leakage
Lighting
illumination
Fabrication
Silicon
fabrication
Lasers
Ions
silicon

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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title = "n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique",
abstract = "We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×1013, 5×1014 and 5×1015 cm-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50{\%} were obtained from our new n-ZnO/p-Si photodiode.",
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n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique. / Park, C. H.; Lee, J. Y.; Im, S.; Kim, T. G.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 01.05.2003, p. 432-435.

Research output: Contribution to journalConference article

TY - JOUR

T1 - n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

AU - Park, C. H.

AU - Lee, J. Y.

AU - Im, S.

AU - Kim, T. G.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×1013, 5×1014 and 5×1015 cm-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50% were obtained from our new n-ZnO/p-Si photodiode.

AB - We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×1013, 5×1014 and 5×1015 cm-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50% were obtained from our new n-ZnO/p-Si photodiode.

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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