n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

C. H. Park, I. S. Jeong, H. S. Bae, T. G. Kim, S. Im

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.

Original languageEnglish
Pages (from-to)127-130
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume216
Issue number1-4
DOIs
Publication statusPublished - 2004 Feb 1
EventProceedings of the E-MRS 2003 Symposium E on Ion Beams - Strasbourg, France
Duration: 2003 Jun 102003 Jun 13

Fingerprint

Photodiodes
Quantum efficiency
Ion implantation
photodiodes
ion implantation
Photons
quantum efficiency
Leakage currents
Heterojunctions
dosage
Energy gap
photons
Fabrication
heterojunctions
isolation
Ions
leakage
fabrication
ions
energy

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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title = "n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation",
abstract = "We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45{\%} under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.",
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n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation. / Park, C. H.; Jeong, I. S.; Bae, H. S.; Kim, T. G.; Im, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 216, No. 1-4, 01.02.2004, p. 127-130.

Research output: Contribution to journalConference article

TY - JOUR

T1 - n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

AU - Park, C. H.

AU - Jeong, I. S.

AU - Bae, H. S.

AU - Kim, T. G.

AU - Im, S.

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N2 - We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.

AB - We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.

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