We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2004 Feb|
|Event||Proceedings of the E-MRS 2003 Symposium E on Ion Beams - Strasbourg, France|
Duration: 2003 Jun 10 → 2003 Jun 13
Bibliographical noteFunding Information:
Authors highly acknowledge the financial support from Korea Institute of Science and Technology Evaluation and Planning (KISTEP, project no. M20204250033-02A0903-00440), the Basic Research Program of the Korea Science and Engineering Foundation (grant no. R01-1999-000-00030-0) and the partial support from the BK21 program.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics