n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

C. H. Park, I. S. Jeong, H. S. Bae, T. G. Kim, S. Im

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.

Original languageEnglish
Pages (from-to)127-130
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume216
Issue number1-4
DOIs
Publication statusPublished - 2004 Feb 1
EventProceedings of the E-MRS 2003 Symposium E on Ion Beams - Strasbourg, France
Duration: 2003 Jun 102003 Jun 13

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this