n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection

Research output: Contribution to journalConference article

31 Citations (Scopus)

Abstract

We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

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Photodetectors
photometers
Photons
Energy gap
photons
Photodiodes
Photocurrents
photodiodes
photocurrents
Diodes
diodes
reflectance
Wavelength
Electric potential
electric potential
wavelengths

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection",
abstract = "We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.",
author = "Jeong, {I. S.} and Kim, {J. H.} and Park, {Hyung Ho} and Seongil Im",
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n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection. / Jeong, I. S.; Kim, J. H.; Park, Hyung Ho; Im, Seongil.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 111-114.

Research output: Contribution to journalConference article

TY - JOUR

T1 - n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection

AU - Jeong, I. S.

AU - Kim, J. H.

AU - Park, Hyung Ho

AU - Im, Seongil

PY - 2004/1/30

Y1 - 2004/1/30

N2 - We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.

AB - We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.

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