n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection

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Abstract

We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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