Nano patterning with a single high-transmission nano-metal aperture system

Yongwoo Kim; Sinjeung Park; Eungman Lee; Jae W. Hahn

doi:10.1117/12.774485

Nano patterning with a single high-transmission nano-metal aperture system

Yongwoo Kim, Sinjeung Park, Eungman Lee, Jae W. Hahn

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We design a C-shaped aperture which overcomes the diffraction limit of light to produce a high-brightness nano-size light spot. For optical nano lithography, we construct a nano patterning system using an optical probe which adopts a solid immersion lens (SIL), the 120 nm thickness aluminum film on the bottom surface of the SIL and the C-shaped aperture engraved in the metal film. Light source is a diode laser of 405nm wavelength to expose h-line photoresist(PR). A linear stage holding the optical probe makes the nano aperture contact with the PR coated on silicon wafer. Using this patterning system, we obtain sub 100nm array patterns and measure the system performance in various exposure conditions to verify the feasibility of plasmonic lithography.

Original language	English
Title of host publication	Emerging Lithographic Technologies XII
DOIs	https://doi.org/10.1117/12.774485
Publication status	Published - 2008
Event	Emerging Lithographic Technologies XII - San Jose, CA, United States Duration: 2008 Feb 26 → 2008 Feb 28

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6921
ISSN (Print)	0277-786X

Other

Other	Emerging Lithographic Technologies XII
Country	United States
City	San Jose, CA
Period	08/2/26 → 08/2/28

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Cite this

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abstract = "We design a C-shaped aperture which overcomes the diffraction limit of light to produce a high-brightness nano-size light spot. For optical nano lithography, we construct a nano patterning system using an optical probe which adopts a solid immersion lens (SIL), the 120 nm thickness aluminum film on the bottom surface of the SIL and the C-shaped aperture engraved in the metal film. Light source is a diode laser of 405nm wavelength to expose h-line photoresist(PR). A linear stage holding the optical probe makes the nano aperture contact with the PR coated on silicon wafer. Using this patterning system, we obtain sub 100nm array patterns and measure the system performance in various exposure conditions to verify the feasibility of plasmonic lithography.",

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N2 - We design a C-shaped aperture which overcomes the diffraction limit of light to produce a high-brightness nano-size light spot. For optical nano lithography, we construct a nano patterning system using an optical probe which adopts a solid immersion lens (SIL), the 120 nm thickness aluminum film on the bottom surface of the SIL and the C-shaped aperture engraved in the metal film. Light source is a diode laser of 405nm wavelength to expose h-line photoresist(PR). A linear stage holding the optical probe makes the nano aperture contact with the PR coated on silicon wafer. Using this patterning system, we obtain sub 100nm array patterns and measure the system performance in various exposure conditions to verify the feasibility of plasmonic lithography.

AB - We design a C-shaped aperture which overcomes the diffraction limit of light to produce a high-brightness nano-size light spot. For optical nano lithography, we construct a nano patterning system using an optical probe which adopts a solid immersion lens (SIL), the 120 nm thickness aluminum film on the bottom surface of the SIL and the C-shaped aperture engraved in the metal film. Light source is a diode laser of 405nm wavelength to expose h-line photoresist(PR). A linear stage holding the optical probe makes the nano aperture contact with the PR coated on silicon wafer. Using this patterning system, we obtain sub 100nm array patterns and measure the system performance in various exposure conditions to verify the feasibility of plasmonic lithography.

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