Abstract
We design a C-shaped aperture which overcomes the diffraction limit of light to produce a high-brightness nano-size light spot. For optical nano lithography, we construct a nano patterning system using an optical probe which adopts a solid immersion lens (SIL), the 120 nm thickness aluminum film on the bottom surface of the SIL and the C-shaped aperture engraved in the metal film. Light source is a diode laser of 405nm wavelength to expose h-line photoresist(PR). A linear stage holding the optical probe makes the nano aperture contact with the PR coated on silicon wafer. Using this patterning system, we obtain sub 100nm array patterns and measure the system performance in various exposure conditions to verify the feasibility of plasmonic lithography.
| Original language | English |
|---|---|
| Title of host publication | Emerging Lithographic Technologies XII |
| Volume | 6921 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | Emerging Lithographic Technologies XII - San Jose, CA, United States Duration: 2008 Feb 26 → 2008 Feb 28 |
Other
| Other | Emerging Lithographic Technologies XII |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 08/2/26 → 08/2/28 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
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Nano patterning with a single high-transmission nano-metal aperture system. / Kim, Yongwoo; Park, Sinjeung; Lee, Eungman; Hahn, Jae Won.
Emerging Lithographic Technologies XII. Vol. 6921 2008. 69212C.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Nano patterning with a single high-transmission nano-metal aperture system
AU - Kim, Yongwoo
AU - Park, Sinjeung
AU - Lee, Eungman
AU - Hahn, Jae Won
PY - 2008/12/1
Y1 - 2008/12/1
N2 - We design a C-shaped aperture which overcomes the diffraction limit of light to produce a high-brightness nano-size light spot. For optical nano lithography, we construct a nano patterning system using an optical probe which adopts a solid immersion lens (SIL), the 120 nm thickness aluminum film on the bottom surface of the SIL and the C-shaped aperture engraved in the metal film. Light source is a diode laser of 405nm wavelength to expose h-line photoresist(PR). A linear stage holding the optical probe makes the nano aperture contact with the PR coated on silicon wafer. Using this patterning system, we obtain sub 100nm array patterns and measure the system performance in various exposure conditions to verify the feasibility of plasmonic lithography.
AB - We design a C-shaped aperture which overcomes the diffraction limit of light to produce a high-brightness nano-size light spot. For optical nano lithography, we construct a nano patterning system using an optical probe which adopts a solid immersion lens (SIL), the 120 nm thickness aluminum film on the bottom surface of the SIL and the C-shaped aperture engraved in the metal film. Light source is a diode laser of 405nm wavelength to expose h-line photoresist(PR). A linear stage holding the optical probe makes the nano aperture contact with the PR coated on silicon wafer. Using this patterning system, we obtain sub 100nm array patterns and measure the system performance in various exposure conditions to verify the feasibility of plasmonic lithography.
UR - http://www.scopus.com/inward/record.url?scp=79959336041&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959336041&partnerID=8YFLogxK
U2 - 10.1117/12.774485
DO - 10.1117/12.774485
M3 - Conference contribution
SN - 9780819471062
VL - 6921
BT - Emerging Lithographic Technologies XII
ER -