Nanocomposites of semimetallic ErAs nanoparticles epitaxially embedded within InGaAlAs-based semiconductors for thermoelectric materials

J. M.O. Zide, G. Zeng, J. H. Bahk, W. Kim, S. L. Singer, D. Vashaee, Z. X. Bian, R. Singh, J. E. Bowers, A. Majumdar, A. Shakouri, A. C. Gossard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present the molecular beam epitaxial growth of nanocomposites consisting of semimetallic ErAs nanoparticles which are epitaxially embedded within InGaAlAs-based semiconductors, The properties of nanocomposites can be drastically different from that of the constituents, and in this case, the incorporation of ErAs is used to increase the thermoelectric power factor and decrease the lattice thermal conductivity, resulting in an increase in the figure of merit, ZT. In addition, the thermoelectric power factor is increased due to electron filtering (solid-state thermionic emission) by barriers within the composite. In one geometry, barriers of InGaAlAs, a wider bandgap semiconductor, are introduced into an ErAs:InGaAs nanocomposite. In a second geometry, ErAs particles are embedded directly into InGaAlAs, Electron filtering occurs due to the Schottky barriers which are formed surrounding the particles. We present a 400-element array based on these materials for thermoelectric power generation; a power density > 1 W/cm2 is demonstrated with a temperature gradient of 120°C.

Original languageEnglish
Title of host publicationProceedings ICT'06 - 25th International Conference on Thermoelectrics
Pages280-282
Number of pages3
DOIs
Publication statusPublished - 2006 Dec 1
EventICT'06 - 25th International Conference on Thermoelectrics - Vienna, Austria
Duration: 2006 Aug 62006 Aug 10

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings

Other

OtherICT'06 - 25th International Conference on Thermoelectrics
CountryAustria
CityVienna
Period06/8/606/8/10

Fingerprint

Thermoelectric power
Nanocomposites
Semiconductor materials
Nanoparticles
Thermionic emission
Molecular beams
Geometry
Electrons
Epitaxial growth
Thermal gradients
Power generation
Thermal conductivity
Energy gap
Composite materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Zide, J. M. O., Zeng, G., Bahk, J. H., Kim, W., Singer, S. L., Vashaee, D., ... Gossard, A. C. (2006). Nanocomposites of semimetallic ErAs nanoparticles epitaxially embedded within InGaAlAs-based semiconductors for thermoelectric materials. In Proceedings ICT'06 - 25th International Conference on Thermoelectrics (pp. 280-282). [4133288] (International Conference on Thermoelectrics, ICT, Proceedings). https://doi.org/10.1109/ICT.2006.331369
Zide, J. M.O. ; Zeng, G. ; Bahk, J. H. ; Kim, W. ; Singer, S. L. ; Vashaee, D. ; Bian, Z. X. ; Singh, R. ; Bowers, J. E. ; Majumdar, A. ; Shakouri, A. ; Gossard, A. C. / Nanocomposites of semimetallic ErAs nanoparticles epitaxially embedded within InGaAlAs-based semiconductors for thermoelectric materials. Proceedings ICT'06 - 25th International Conference on Thermoelectrics. 2006. pp. 280-282 (International Conference on Thermoelectrics, ICT, Proceedings).
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abstract = "We present the molecular beam epitaxial growth of nanocomposites consisting of semimetallic ErAs nanoparticles which are epitaxially embedded within InGaAlAs-based semiconductors, The properties of nanocomposites can be drastically different from that of the constituents, and in this case, the incorporation of ErAs is used to increase the thermoelectric power factor and decrease the lattice thermal conductivity, resulting in an increase in the figure of merit, ZT. In addition, the thermoelectric power factor is increased due to electron filtering (solid-state thermionic emission) by barriers within the composite. In one geometry, barriers of InGaAlAs, a wider bandgap semiconductor, are introduced into an ErAs:InGaAs nanocomposite. In a second geometry, ErAs particles are embedded directly into InGaAlAs, Electron filtering occurs due to the Schottky barriers which are formed surrounding the particles. We present a 400-element array based on these materials for thermoelectric power generation; a power density > 1 W/cm2 is demonstrated with a temperature gradient of 120°C.",
author = "Zide, {J. M.O.} and G. Zeng and Bahk, {J. H.} and W. Kim and Singer, {S. L.} and D. Vashaee and Bian, {Z. X.} and R. Singh and Bowers, {J. E.} and A. Majumdar and A. Shakouri and Gossard, {A. C.}",
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Zide, JMO, Zeng, G, Bahk, JH, Kim, W, Singer, SL, Vashaee, D, Bian, ZX, Singh, R, Bowers, JE, Majumdar, A, Shakouri, A & Gossard, AC 2006, Nanocomposites of semimetallic ErAs nanoparticles epitaxially embedded within InGaAlAs-based semiconductors for thermoelectric materials. in Proceedings ICT'06 - 25th International Conference on Thermoelectrics., 4133288, International Conference on Thermoelectrics, ICT, Proceedings, pp. 280-282, ICT'06 - 25th International Conference on Thermoelectrics, Vienna, Austria, 06/8/6. https://doi.org/10.1109/ICT.2006.331369

Nanocomposites of semimetallic ErAs nanoparticles epitaxially embedded within InGaAlAs-based semiconductors for thermoelectric materials. / Zide, J. M.O.; Zeng, G.; Bahk, J. H.; Kim, W.; Singer, S. L.; Vashaee, D.; Bian, Z. X.; Singh, R.; Bowers, J. E.; Majumdar, A.; Shakouri, A.; Gossard, A. C.

Proceedings ICT'06 - 25th International Conference on Thermoelectrics. 2006. p. 280-282 4133288 (International Conference on Thermoelectrics, ICT, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Nanocomposites of semimetallic ErAs nanoparticles epitaxially embedded within InGaAlAs-based semiconductors for thermoelectric materials

AU - Zide, J. M.O.

AU - Zeng, G.

AU - Bahk, J. H.

AU - Kim, W.

AU - Singer, S. L.

AU - Vashaee, D.

AU - Bian, Z. X.

AU - Singh, R.

AU - Bowers, J. E.

AU - Majumdar, A.

AU - Shakouri, A.

AU - Gossard, A. C.

PY - 2006/12/1

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N2 - We present the molecular beam epitaxial growth of nanocomposites consisting of semimetallic ErAs nanoparticles which are epitaxially embedded within InGaAlAs-based semiconductors, The properties of nanocomposites can be drastically different from that of the constituents, and in this case, the incorporation of ErAs is used to increase the thermoelectric power factor and decrease the lattice thermal conductivity, resulting in an increase in the figure of merit, ZT. In addition, the thermoelectric power factor is increased due to electron filtering (solid-state thermionic emission) by barriers within the composite. In one geometry, barriers of InGaAlAs, a wider bandgap semiconductor, are introduced into an ErAs:InGaAs nanocomposite. In a second geometry, ErAs particles are embedded directly into InGaAlAs, Electron filtering occurs due to the Schottky barriers which are formed surrounding the particles. We present a 400-element array based on these materials for thermoelectric power generation; a power density > 1 W/cm2 is demonstrated with a temperature gradient of 120°C.

AB - We present the molecular beam epitaxial growth of nanocomposites consisting of semimetallic ErAs nanoparticles which are epitaxially embedded within InGaAlAs-based semiconductors, The properties of nanocomposites can be drastically different from that of the constituents, and in this case, the incorporation of ErAs is used to increase the thermoelectric power factor and decrease the lattice thermal conductivity, resulting in an increase in the figure of merit, ZT. In addition, the thermoelectric power factor is increased due to electron filtering (solid-state thermionic emission) by barriers within the composite. In one geometry, barriers of InGaAlAs, a wider bandgap semiconductor, are introduced into an ErAs:InGaAs nanocomposite. In a second geometry, ErAs particles are embedded directly into InGaAlAs, Electron filtering occurs due to the Schottky barriers which are formed surrounding the particles. We present a 400-element array based on these materials for thermoelectric power generation; a power density > 1 W/cm2 is demonstrated with a temperature gradient of 120°C.

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U2 - 10.1109/ICT.2006.331369

DO - 10.1109/ICT.2006.331369

M3 - Conference contribution

AN - SCOPUS:46149112411

SN - 1424408105

SN - 9781424408108

T3 - International Conference on Thermoelectrics, ICT, Proceedings

SP - 280

EP - 282

BT - Proceedings ICT'06 - 25th International Conference on Thermoelectrics

ER -

Zide JMO, Zeng G, Bahk JH, Kim W, Singer SL, Vashaee D et al. Nanocomposites of semimetallic ErAs nanoparticles epitaxially embedded within InGaAlAs-based semiconductors for thermoelectric materials. In Proceedings ICT'06 - 25th International Conference on Thermoelectrics. 2006. p. 280-282. 4133288. (International Conference on Thermoelectrics, ICT, Proceedings). https://doi.org/10.1109/ICT.2006.331369