Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface. A hexagonal boron nitride (h-BN) thin film with an atomically flat surface was obtained using unintentionally formed nanocrystalline graphene (nc-G). A wafer-scale dielectric h-BN thin film was synthesized on a bare sapphire substrate with the assistance of nc-G, which prevented structural deformations during chemical vapor deposition. The sp3-hybridized edges of nc-G play a key role during these processes.
|Number of pages||5|
|Journal||Angewandte Chemie - International Edition|
|Publication status||Published - 2014 Oct 1|
Bibliographical noteFunding Information:
This work was financially supported by the Basic Science Research Program (2012R1A2A1A01002787 and 2009-0083540) and the Global Frontier Research Center for Advanced Soft Electronics (2013M3A6A5073177) through the National Research Foundation (NRF) of Korea, which is funded by the Ministry of Science, ICT & Future Planning. Supporting information for this article is available on the WWW under http://dx.doi.org/10.1002/anie.201405762.
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