Nanograting fabrication on the surface of silicon and gallium arsenide using femtosecond laser pulses

Dae Jin Kim; Tae Hong Kim; Woo Young Jang; Ki Soo Lim; Myeongkyu Lee; Ik Bu Sohn

doi:10.1143/JJAP.50.06GG11

Nanograting fabrication on the surface of silicon and gallium arsenide using femtosecond laser pulses

Dae Jin Kim, Tae Hong Kim, Woo Young Jang, Ki Soo Lim, Myeongkyu Lee, Ik Bu Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

Abstract

Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.

Original language	English
Article number	06GG11
Journal	Japanese journal of applied physics
Volume	50
Issue number	6 PART 2
DOIs	https://doi.org/10.1143/JJAP.50.06GG11
Publication status	Published - 2011 Jun

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.50.06GG11

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title = "Nanograting fabrication on the surface of silicon and gallium arsenide using femtosecond laser pulses",

abstract = "Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.",

author = "Kim, {Dae Jin} and Kim, {Tae Hong} and Jang, {Woo Young} and Lim, {Ki Soo} and Myeongkyu Lee and Sohn, {Ik Bu}",

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language = "English",

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AU - Kim, Tae Hong

AU - Jang, Woo Young

AU - Lim, Ki Soo

AU - Lee, Myeongkyu

AU - Sohn, Ik Bu

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AB - Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.

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