Nanograting fabrication on the surface of silicon and gallium arsenide using femtosecond laser pulses

Dae Jin Kim, Tae Hong Kim, Woo Young Jang, Ki Soo Lim, Myeongkyu Lee, Ik Bu Sohn

Research output: Contribution to journalArticle

Abstract

Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.

Original languageEnglish
Article number06GG11
JournalJapanese journal of applied physics
Volume50
Issue number6 PART 2
DOIs
Publication statusPublished - 2011 Jun 1

Fingerprint

Gallium arsenide
Ultrashort pulses
gallium
Fabrication
Silicon
fabrication
silicon
pulses
lasers
Laser beams
periodic variations
Microscopes
microscopes
Irradiation
wafers
gratings
laser beams
Polarization
Semiconductor materials
Scanning

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kim, Dae Jin ; Kim, Tae Hong ; Jang, Woo Young ; Lim, Ki Soo ; Lee, Myeongkyu ; Sohn, Ik Bu. / Nanograting fabrication on the surface of silicon and gallium arsenide using femtosecond laser pulses. In: Japanese journal of applied physics. 2011 ; Vol. 50, No. 6 PART 2.
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Nanograting fabrication on the surface of silicon and gallium arsenide using femtosecond laser pulses. / Kim, Dae Jin; Kim, Tae Hong; Jang, Woo Young; Lim, Ki Soo; Lee, Myeongkyu; Sohn, Ik Bu.

In: Japanese journal of applied physics, Vol. 50, No. 6 PART 2, 06GG11, 01.06.2011.

Research output: Contribution to journalArticle

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