Abstract
Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.
| Original language | English |
|---|---|
| Article number | 06GG11 |
| Journal | Japanese journal of applied physics |
| Volume | 50 |
| Issue number | 6 PART 2 |
| DOIs | |
| Publication status | Published - 2011 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Nanograting fabrication on the surface of silicon and gallium arsenide using femtosecond laser pulses. / Kim, Dae Jin; Kim, Tae Hong; Jang, Woo Young; Lim, Ki Soo; Lee, Myeongkyu; Sohn, Ik Bu.
In: Japanese journal of applied physics, Vol. 50, No. 6 PART 2, 06GG11, 01.06.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Nanograting fabrication on the surface of silicon and gallium arsenide using femtosecond laser pulses
AU - Kim, Dae Jin
AU - Kim, Tae Hong
AU - Jang, Woo Young
AU - Lim, Ki Soo
AU - Lee, Myeongkyu
AU - Sohn, Ik Bu
PY - 2011/6/1
Y1 - 2011/6/1
N2 - Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.
AB - Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.
UR - http://www.scopus.com/inward/record.url?scp=79959482532&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959482532&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.06GG11
DO - 10.1143/JJAP.50.06GG11
M3 - Article
AN - SCOPUS:79959482532
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 6 PART 2
M1 - 06GG11
ER -