Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate

Woo Hee Kim; Sang Joon Park; H. Kim

doi:10.1109/NMDC.2006.4388940

Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate

Woo Hee Kim, Sang Joon Park, H. Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Ru Atomic layer deposition (ALD) and anodic aluminum oxide (AAO) process were studied for fabrication of one dimensional metallic nanostructure. Low resistivity and very pure ruthenium thin films were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)₂] by thermal atomic layer deposition (ALD) using oxygen (O₂) gas and plasmaenhanced ALD (PE-ALD) using ammonia (NH₃) plasma. In addition, regularly ordered porous anodic aluminum oxide nanotemplates were fabricated on aluminum plate and Al film by multistep-step anodization method. The process conditions for Ru ALD process to fabricate metallic nanostructure by filling the nanotemplates were investigated.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	636-637
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388940
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388940

Cite this

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title = "Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate",

abstract = "Ru Atomic layer deposition (ALD) and anodic aluminum oxide (AAO) process were studied for fabrication of one dimensional metallic nanostructure. Low resistivity and very pure ruthenium thin films were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] by thermal atomic layer deposition (ALD) using oxygen (O2) gas and plasmaenhanced ALD (PE-ALD) using ammonia (NH3) plasma. In addition, regularly ordered porous anodic aluminum oxide nanotemplates were fabricated on aluminum plate and Al film by multistep-step anodization method. The process conditions for Ru ALD process to fabricate metallic nanostructure by filling the nanotemplates were investigated.",

author = "Kim, {Woo Hee} and Park, {Sang Joon} and H. Kim",

year = "2006",

doi = "10.1109/NMDC.2006.4388940",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "636--637",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Kim, WH, Park, SJ & Kim, H 2006, Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388940, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 636-637, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388940

Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate. / Kim, Woo Hee; Park, Sang Joon; Kim, H.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 636-637 4388940 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

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AU - Kim, Woo Hee

AU - Park, Sang Joon

AU - Kim, H.

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N2 - Ru Atomic layer deposition (ALD) and anodic aluminum oxide (AAO) process were studied for fabrication of one dimensional metallic nanostructure. Low resistivity and very pure ruthenium thin films were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] by thermal atomic layer deposition (ALD) using oxygen (O2) gas and plasmaenhanced ALD (PE-ALD) using ammonia (NH3) plasma. In addition, regularly ordered porous anodic aluminum oxide nanotemplates were fabricated on aluminum plate and Al film by multistep-step anodization method. The process conditions for Ru ALD process to fabricate metallic nanostructure by filling the nanotemplates were investigated.

AB - Ru Atomic layer deposition (ALD) and anodic aluminum oxide (AAO) process were studied for fabrication of one dimensional metallic nanostructure. Low resistivity and very pure ruthenium thin films were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] by thermal atomic layer deposition (ALD) using oxygen (O2) gas and plasmaenhanced ALD (PE-ALD) using ammonia (NH3) plasma. In addition, regularly ordered porous anodic aluminum oxide nanotemplates were fabricated on aluminum plate and Al film by multistep-step anodization method. The process conditions for Ru ALD process to fabricate metallic nanostructure by filling the nanotemplates were investigated.

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DO - 10.1109/NMDC.2006.4388940

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SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

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BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate

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