Nanometer-accurate grating fabrication with scanning beam interference lithography

Carl G. Chen, Paul T. Konkola, Ralf K. Heilmann, Chulmin Joo, Mark L. Schattenburg

Research output: Contribution to journalConference article

39 Citations (Scopus)

Abstract

We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.

Original languageEnglish
Pages (from-to)126-134
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4936
DOIs
Publication statusPublished - 2002 Dec 1

Fingerprint

Lithography
Gratings
Scanning
Fabrication
lithography
Interference
gratings
interference
fabrication
scanning
Phase Error
phase error
Prototyping
Patterning
Metrology
metrology
Semiconductor materials
Semiconductors
Paradigm
grids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chen, Carl G. ; Konkola, Paul T. ; Heilmann, Ralf K. ; Joo, Chulmin ; Schattenburg, Mark L. / Nanometer-accurate grating fabrication with scanning beam interference lithography. In: Proceedings of SPIE - The International Society for Optical Engineering. 2002 ; Vol. 4936. pp. 126-134.
@article{5c39d1c996f34102b844a6f62832844b,
title = "Nanometer-accurate grating fabrication with scanning beam interference lithography",
abstract = "We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.",
author = "Chen, {Carl G.} and Konkola, {Paul T.} and Heilmann, {Ralf K.} and Chulmin Joo and Schattenburg, {Mark L.}",
year = "2002",
month = "12",
day = "1",
doi = "10.1117/12.469431",
language = "English",
volume = "4936",
pages = "126--134",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

Nanometer-accurate grating fabrication with scanning beam interference lithography. / Chen, Carl G.; Konkola, Paul T.; Heilmann, Ralf K.; Joo, Chulmin; Schattenburg, Mark L.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4936, 01.12.2002, p. 126-134.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Nanometer-accurate grating fabrication with scanning beam interference lithography

AU - Chen, Carl G.

AU - Konkola, Paul T.

AU - Heilmann, Ralf K.

AU - Joo, Chulmin

AU - Schattenburg, Mark L.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.

AB - We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.

UR - http://www.scopus.com/inward/record.url?scp=0038079310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038079310&partnerID=8YFLogxK

U2 - 10.1117/12.469431

DO - 10.1117/12.469431

M3 - Conference article

AN - SCOPUS:0038079310

VL - 4936

SP - 126

EP - 134

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -