Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Doohee Cho, Sangmo Cheon, Ki Seok Kim, Sung Hoon Lee, Yong Heum Cho, Sang Wook Cheong, Han Woong Yeom

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.

Original languageEnglish
Article number10453
JournalNature communications
Volume7
DOIs
Publication statusPublished - 2016 Jan 22

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Charge density waves
manipulators
Electron correlations
Equipment and Supplies
Domain walls
Electronic states
Controllability
electronics
Transition metals
Microscopes
Metals
Switches
Electrons
Scanning
controllability
Electric potential
domain wall
switches
transition metals
microscopes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Cho, D., Cheon, S., Kim, K. S., Lee, S. H., Cho, Y. H., Cheong, S. W., & Yeom, H. W. (2016). Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2. Nature communications, 7, [10453]. https://doi.org/10.1038/ncomms10453
Cho, Doohee ; Cheon, Sangmo ; Kim, Ki Seok ; Lee, Sung Hoon ; Cho, Yong Heum ; Cheong, Sang Wook ; Yeom, Han Woong. / Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2. In: Nature communications. 2016 ; Vol. 7.
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Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2. / Cho, Doohee; Cheon, Sangmo; Kim, Ki Seok; Lee, Sung Hoon; Cho, Yong Heum; Cheong, Sang Wook; Yeom, Han Woong.

In: Nature communications, Vol. 7, 10453, 22.01.2016.

Research output: Contribution to journalArticle

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AU - Cheong, Sang Wook

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