Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Doohee Cho, Sangmo Cheon, Ki Seok Kim, Sung Hoon Lee, Yong Heum Cho, Sang Wook Cheong, Han Woong Yeom

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75 Citations (Scopus)

Abstract

The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.

Original languageEnglish
Article number10453
JournalNature communications
Volume7
DOIs
Publication statusPublished - 2016 Jan 22

Bibliographical note

Funding Information:
This work was supported by the Institute for Basic Science (Grant No. IBS-R014-D1). Y.-H.C. and S.-W.C. are partially supported by the Max Planck POSTECH/KOREA Research Initiative Program (Grant No. 2011-0031558) through NRF of Korea funded by MEST. S.-W.C. is also supported by the Gordon and Betty Moore Foundations EPiQS Initiative through Grant GBMF4413 to the Rutgers Center for Emergent Materials.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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