Abstract
We report on the nanosheet-thickness effects on the performance of top-gate MoS2 field-effect transistors (FETs), which is directly related to the MoS2 dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al2O3 displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO 2, benefiting from the dielectric screening by high-k Al 2O3. Among the top-gate devices, the single-layered FET demonstrated the highest mobility of ∼170 cm2 V-1 s-1 with 90 mV dec-1 as the smallest subthreshold swing (SS) but the double- and triple-layered FETs showed only ∼25 and ∼15 cm2 V-1 s-1 respectively with the large SS of 0.5 and 1.1 V dec-1. Such property degradation with MoS2 thickness is attributed to its dielectric constant increase, which could rather reduce the benefits from the top-gate high-k dielectric.
| Original language | English |
|---|---|
| Pages (from-to) | 548-551 |
| Number of pages | 4 |
| Journal | Nanoscale |
| Volume | 5 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2013 Jan 21 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance. / Min, Sung Wook; Lee, Hee Sung; Choi, Hyoung Joon; Park, Min Kyu; Nam, Taewook; Kim, Hyungjun; Ryu, Sunmin; Im, Seongil.
In: Nanoscale, Vol. 5, No. 2, 21.01.2013, p. 548-551.Research output: Contribution to journal › Article
TY - JOUR
T1 - Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance
AU - Min, Sung Wook
AU - Lee, Hee Sung
AU - Choi, Hyoung Joon
AU - Park, Min Kyu
AU - Nam, Taewook
AU - Kim, Hyungjun
AU - Ryu, Sunmin
AU - Im, Seongil
PY - 2013/1/21
Y1 - 2013/1/21
N2 - We report on the nanosheet-thickness effects on the performance of top-gate MoS2 field-effect transistors (FETs), which is directly related to the MoS2 dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al2O3 displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO 2, benefiting from the dielectric screening by high-k Al 2O3. Among the top-gate devices, the single-layered FET demonstrated the highest mobility of ∼170 cm2 V-1 s-1 with 90 mV dec-1 as the smallest subthreshold swing (SS) but the double- and triple-layered FETs showed only ∼25 and ∼15 cm2 V-1 s-1 respectively with the large SS of 0.5 and 1.1 V dec-1. Such property degradation with MoS2 thickness is attributed to its dielectric constant increase, which could rather reduce the benefits from the top-gate high-k dielectric.
AB - We report on the nanosheet-thickness effects on the performance of top-gate MoS2 field-effect transistors (FETs), which is directly related to the MoS2 dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al2O3 displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO 2, benefiting from the dielectric screening by high-k Al 2O3. Among the top-gate devices, the single-layered FET demonstrated the highest mobility of ∼170 cm2 V-1 s-1 with 90 mV dec-1 as the smallest subthreshold swing (SS) but the double- and triple-layered FETs showed only ∼25 and ∼15 cm2 V-1 s-1 respectively with the large SS of 0.5 and 1.1 V dec-1. Such property degradation with MoS2 thickness is attributed to its dielectric constant increase, which could rather reduce the benefits from the top-gate high-k dielectric.
UR - http://www.scopus.com/inward/record.url?scp=84871758711&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871758711&partnerID=8YFLogxK
U2 - 10.1039/c2nr33443g
DO - 10.1039/c2nr33443g
M3 - Article
C2 - 23233087
AN - SCOPUS:84871758711
VL - 5
SP - 548
EP - 551
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 2
ER -