A 30-nm-thick Al layer was deposited on top of the hydrogenated amorphous silicon films by radio frequency magnetron sputter, and then heat-treatments were carried out at temperatures of 350∼500 °C. The intensity of the photoluminescence spectra of the post-deposition heat-treated films gradually increased at wavelengths of ∼420 as well as ∼580 nm with raising the annealing temperature from 350 to 500 °C. It is highly likely that the observed increase of the photoluminescence intensity is caused by the increase in the total volume of the nanocrystallites with the size of ∼2 and ∼5 nm in the films, respectively. These also indicate that the aluminium-induced crystallization processing enhances the nucleation of Si crystallites in the films, resulting in the decrease of the lowest crystallization temperature from 500 to 350 °C.
Bibliographical noteFunding Information:
This work was supported by grant NO. R01-1999-00030-0 from the Basic Research Program of the Korea Science and Engineering Foundation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry