Nanostructural and optical features of hydrogenated nanocrystalline silicon films prepared by aluminium-induced crystallization

J. H. Shim, Seongil Im, Youn Joong Kim, N. H. Cho

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A 30-nm-thick Al layer was deposited on top of the hydrogenated amorphous silicon films by radio frequency magnetron sputter, and then heat-treatments were carried out at temperatures of 350∼500 °C. The intensity of the photoluminescence spectra of the post-deposition heat-treated films gradually increased at wavelengths of ∼420 as well as ∼580 nm with raising the annealing temperature from 350 to 500 °C. It is highly likely that the observed increase of the photoluminescence intensity is caused by the increase in the total volume of the nanocrystallites with the size of ∼2 and ∼5 nm in the films, respectively. These also indicate that the aluminium-induced crystallization processing enhances the nucleation of Si crystallites in the films, resulting in the decrease of the lowest crystallization temperature from 500 to 350 °C.

Original languageEnglish
Pages (from-to)55-59
Number of pages5
JournalThin Solid Films
Volume503
Issue number1-2
DOIs
Publication statusPublished - 2006 May 1

Fingerprint

Nanocrystalline silicon
Crystallization
silicon films
Aluminum
crystallization
aluminum
photoluminescence
Photoluminescence
Nanocrystallites
crystallites
amorphous silicon
temperature
radio frequencies
heat treatment
Amorphous silicon
Crystallites
nucleation
Temperature
heat
annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "A 30-nm-thick Al layer was deposited on top of the hydrogenated amorphous silicon films by radio frequency magnetron sputter, and then heat-treatments were carried out at temperatures of 350∼500 °C. The intensity of the photoluminescence spectra of the post-deposition heat-treated films gradually increased at wavelengths of ∼420 as well as ∼580 nm with raising the annealing temperature from 350 to 500 °C. It is highly likely that the observed increase of the photoluminescence intensity is caused by the increase in the total volume of the nanocrystallites with the size of ∼2 and ∼5 nm in the films, respectively. These also indicate that the aluminium-induced crystallization processing enhances the nucleation of Si crystallites in the films, resulting in the decrease of the lowest crystallization temperature from 500 to 350 °C.",
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Nanostructural and optical features of hydrogenated nanocrystalline silicon films prepared by aluminium-induced crystallization. / Shim, J. H.; Im, Seongil; Kim, Youn Joong; Cho, N. H.

In: Thin Solid Films, Vol. 503, No. 1-2, 01.05.2006, p. 55-59.

Research output: Contribution to journalArticle

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AB - A 30-nm-thick Al layer was deposited on top of the hydrogenated amorphous silicon films by radio frequency magnetron sputter, and then heat-treatments were carried out at temperatures of 350∼500 °C. The intensity of the photoluminescence spectra of the post-deposition heat-treated films gradually increased at wavelengths of ∼420 as well as ∼580 nm with raising the annealing temperature from 350 to 500 °C. It is highly likely that the observed increase of the photoluminescence intensity is caused by the increase in the total volume of the nanocrystallites with the size of ∼2 and ∼5 nm in the films, respectively. These also indicate that the aluminium-induced crystallization processing enhances the nucleation of Si crystallites in the films, resulting in the decrease of the lowest crystallization temperature from 500 to 350 °C.

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