Nanostructural and PL features of nc-Si

H thin films prepared by PECVD techniques

J. H. Shim, N. H. Cho, Seongil Im

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.

Original languageEnglish
Pages (from-to)1017-1020
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26

Fingerprint

Plasma enhanced chemical vapor deposition
flow velocity
Flow rate
vapor deposition
Crystallite size
Thin films
thin films
Nanocrystalline silicon
Crystallization
Crystal growth
crystal growth
Hydrogen bonds
Gases
Kinetics
kinetics
silicon
hydrogen
gases
Experiments

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.",
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Nanostructural and PL features of nc-Si : H thin films prepared by PECVD techniques. / Shim, J. H.; Cho, N. H.; Im, Seongil.

In: Materials Science Forum, Vol. 449-452, No. II, 26.07.2004, p. 1017-1020.

Research output: Contribution to journalConference article

TY - JOUR

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T2 - H thin films prepared by PECVD techniques

AU - Shim, J. H.

AU - Cho, N. H.

AU - Im, Seongil

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AB - Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.

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